4AK21 PDF даташит
Спецификация 4AK21 изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «Silicon N-Channel Power MOS FET Array». |
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Детали детали
Номер произв | 4AK21 |
Описание | Silicon N-Channel Power MOS FET Array |
Производители | Hitachi Semiconductor |
логотип |
6 Pages
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4AK21
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
RDS(on) 0.09 , VGS = 10 V, ID = 4 A
RDS(on) 0.12 , VGS = 4 V, ID = 4 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver, solenoid driver and lamp driver
• Discrete packaged devices of same die: 2SK1302, 2SK1307
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4AK21
Outline
SP-10
3579
DDDD
468
GGG
2G
1 2 3 4 5 6 7 8 9 10
1, 10. Source
1S
S 10
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 devices operation
Symbol
Rating
VDSS
100
VGSS
±20
ID
I *1
D(pulse)
8
32
IDR 8
Pch (Tc = 25°C)*2 28
Pch*2
4
Tch 150
Tstg –55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
2
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4AK21
Electrical Characteristics (Ta = 25°C) (1 Unit)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
100
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
—
—
1.0
—
—
Forward transfer admittance
Input capacitance
|yfs|
Ciss
6.0
—
Output capacitance
Coss —
Reverse transfer capacitance Crss
—
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
—
—
—
—
—
Body to drain diode reverse
recovery time
t rr
—
Note: 1. Pulse Test
Typ Max Unit
— —V
— —V
—
—
—
0.07
0.09
10.0
1300
540
160
12
60
320
120
1.0
±10
250
2.0
0.09
0.125
—
—
—
—
—
—
—
—
—
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
200 —
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V*1
ID = 4 A, VGS = 4 V*1
ID = 4 A, VDS = 10 V*1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 4 A, VGS = 10 V,
RL = 7.5 Ω
IF = 8 A, VGS = 0
IF = 8 A, VGS = 0
dIF/dt = 50 A/µs
See characteristic curves of 2SK1302
3
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