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4AK21 PDF даташит

Спецификация 4AK21 изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «Silicon N-Channel Power MOS FET Array».

Детали детали

Номер произв 4AK21
Описание Silicon N-Channel Power MOS FET Array
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

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4AK21 Даташит, Описание, Даташиты
4AK21
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance
RDS(on) 0.09 , VGS = 10 V, ID = 4 A
RDS(on) 0.12 , VGS = 4 V, ID = 4 A
Capable of 4 V gate drive
Low drive current
High speed switching
High density mounting
Suitable for motor driver, solenoid driver and lamp driver
Discrete packaged devices of same die: 2SK1302, 2SK1307









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4AK21 Даташит, Описание, Даташиты
4AK21
Outline
SP-10
3579
DDDD
468
GGG
2G
1 2 3 4 5 6 7 8 9 10
1, 10. Source
1S
S 10
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. 4 devices operation
Symbol
Rating
VDSS
100
VGSS
±20
ID
I *1
D(pulse)
8
32
IDR 8
Pch (Tc = 25°C)*2 28
Pch*2
4
Tch 150
Tstg –55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
2









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4AK21 Даташит, Описание, Даташиты
4AK21
Electrical Characteristics (Ta = 25°C) (1 Unit)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
100
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
1.0
Forward transfer admittance
Input capacitance
|yfs|
Ciss
6.0
Output capacitance
Coss —
Reverse transfer capacitance Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse Test
Typ Max Unit
— —V
— —V
0.07
0.09
10.0
1300
540
160
12
60
320
120
1.0
±10
250
2.0
0.09
0.125
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
200 —
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V*1
ID = 4 A, VGS = 4 V*1
ID = 4 A, VDS = 10 V*1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 4 A, VGS = 10 V,
RL = 7.5
IF = 8 A, VGS = 0
IF = 8 A, VGS = 0
dIF/dt = 50 A/µs
See characteristic curves of 2SK1302
3










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