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5L0380R PDF даташит

Спецификация 5L0380R изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «Fairchild Power Switch(FPS)».

Детали детали

Номер произв 5L0380R
Описание Fairchild Power Switch(FPS)
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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5L0380R Даташит, Описание, Даташиты
www.fairchildsemi.com
KA5x03xx-SERIES
KA5H0365R, KA5M0365R, KA5L0365R
KA5H0380R, KA5M0380R, KA5L0380R
Fairchild Power Switch(FPS)
Features
• Precision Fixed Operating Frequency (100/67/50kHz)
• Low Start-up Current(Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Current Protection
• Over Voltage Protection (Min. 25V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Applications
• SMPS for VCR, SVR, STB, DVD & DVCD
• SMPS for Printer, Facsimile & Scanner
• Adaptor for Camcorder
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
Included PWM controller integrates the fixed frequency
oscillator, the under voltage lock-out, the leading edge
blanking, the optimized gate turn-on/turn-off driver, the
thermal shutdown protection, the over voltage protection,
and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a PWM controller or
an RCCsolution, a Fairchild Power Switch(FPS) can reduce
the total component count, design size and weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter
TO-220F-4L
Internal Block Diagram
1
1. GND 2. Drain 3. VCC 4. FB
#3 VCC
#4 FB
32V 5V Internal
Vref bias
Good
logic
5μA
7.5V
27V
OSC
9V
1mA
S
Q
R
2.5R
1R
+
L.E.B
0.1V
+
+ Thermal S/D
S
Q
R
OVER VOLTAGE S/D
Power on reset
©2003 Fairchild Semiconductor Corporation
SFET
#2 DRAIN
#1 GND
Rev.1.0.7









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5L0380R Даташит, Описание, Даташиты
KA5X03XX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Gate Voltage (RGS=1MΩ)
Gate-Source (GND) Voltage
Drain Current Pulsed (1)
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Single Pulsed Avalanche Energy (2)
Maximum Supply Voltage
Analog Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Gate Voltage (RGS=1MΩ)
Gate-Source (GND) Voltage
Drain Current Pulsed (1)
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Single Pulsed Avalanche Energy (2)
Maximum Supply Voltage
Analog Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
Symbol
VDGR
VGS
IDM
ID
ID
EAS
VCC,MAX
VFB
PD
Derating
TJ
TA
TSTG
VDGR
VGS
IDM
ID
ID
EAS
VCC,MAX
VFB
PD
Derating
TJ
TA
TSTG
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
3. L = 13μH, starting Tj = 25°C
Value
650
±30
12.0
3.0
2.4
358
30
-0.3 to VSD
75
0.6
+150
-40 to +85
-55 to +150
800
±30
12.0
3.0
2.1
95
30
-0.3 to VSD
75
0.6
+150
-40 to +85
-55 to +150
Unit
V
V
ADC
ADC
ADC
mJ
V
V
W
W/°C
°C
°C
°C
V
V
ADC
ADC
ADC
mJ
V
V
W
W/°C
°C
°C
°C
2









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5L0380R Даташит, Описание, Даташиты
KA5X03XX-SERIES
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Gate-Drain (Miller) Charge
Qgd
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Condition
Min.
VGS=0V, ID=50μA
VDS=Max. Rating, VGS=0V
VDS=0.8Max. Rating,
VGS=0V, TC=125°C
VGS=10V, ID=0.5A
VDS=50V, ID=0.5A
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
switching time is essentially
independent of
operating temperature)
650
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
VGS=0V, ID=50μA
VDS=Max. Rating, VGS=0V
VDS=0.8Max. Rating,
VGS=0V, TC=125°C
VGS=10V, ID=0.5A
VDS=50V, ID=0.5A
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
switching time is
essentially independent of
operating temperature)
800
-
-
-
1.5
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
--
- 50
- 200
3.6 4.5
--
720 -
40 -
40 -
150 -
100 -
150 -
42 -
- 34
7.3 -
13.3 -
V
μA
μA
Ω
S
pF
nS
nC
--
- 250
- 1000
4.0 5.0
2.5 -
779 -
75.6 -
24.9 -
40 -
95 -
150 -
60 -
- 34
7.2 -
12.1 -
V
μA
μA
Ω
S
pF
nS
nC
Note:
1. Pulse test: Pulse width 300μS, duty 2%
2. S = R-1--
3










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Номер в каталогеОписаниеПроизводители
5L0380RFairchild Power Switch(FPS)Fairchild Semiconductor
Fairchild Semiconductor

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