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5KP110 PDF даташит

Спецификация 5KP110 изготовлена ​​​​«General Semiconductor» и имеет функцию, называемую «TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR».

Детали детали

Номер произв 5KP110
Описание TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR
Производители General Semiconductor
логотип General Semiconductor логотип 

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5KP110 Даташит, Описание, Даташиты
5KP5.0 THRU 5KP110A
TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR
Stand-off Voltage - 5.0 to 110 Volts Peak Pulse Power - 5000 Watts
Case Style P600
0.360 (9.1)
0.340 (8.6)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
Available in uni-directional only
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
5000W peak pulse power
capability with a 10/1000µs waveform,
repetition rate (duty cycle): 0.05%
Excellent clamping capability
Low incremental surge resistance
Fast response time: typically less
than 1.0ps from 0 Volts to V(BR)
Devices with V(BR)>10V ID are typically ID less
than 1.0µA
High temperature soldering guaranteed:
265°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
MECHANICAL DATA
Case: Molded plastic body over glass passivated junction
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: The color band denotes the cathode, which is
postitive with respect to the anode under normal TVS oper-
ation
Mounting Position: Any
Weight: 0.07 ounce, 2.1 grams
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Peak pulse power dissipation with a 10/1000µs
waveform (NOTE 1, FIG. 1)
Peak pulse current with a 10/1000µs
waveform (NOTE 1)
Steady state power dissipation at TL=75°C
lead lengths 0.375” (9.5mm) (NOTE 2)
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load
(JEDEC Method) (NOTE 3)
Instantaneous forward voltage at 100A, (NOTE 3)
Operating junction and storage temperature range
SYMBOL
PPPM
IPPM
PM(AV)
IFSM
VF
TJ, TSTG
NOTES:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2
(2) Mounted on copper pad area of 0.8 x 0.8” (20 x 20mm) per Fig. 5
(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
VALUE
Minimum 5000
SEE TABLE 1
8.0
400
3.5
-55 to +175
UNITS
Watts
Amps
Watts
Amps
Volts
°C
1/21/99









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5KP110 Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS at (TA=25°C unless otherwise noted) TABLE 1
Device Type
5KP5.0
5KP5.0A
5KP6.0
5KP6.0A
5KP6.5
5KP6.5A
5KP7.0
5KP7.0A
5KP7.5
5KP7.5A
5KP8.0
5KP8.0A
5KP8.5
5KP8.5A
5KP9.0
5KP9.0A
5KP10
5KP10A
5KP11
5KP11A
5KP12
5KP12A
5KP13
5KP13A
5KP14
5KP14A
5KP15
5KP15A
5KP16
5KP16A
5KP17
5KP17A
5KP18
5KP18A
5KP20
5KP20A
5KP22
5KP22A
5KP24
5KP24A
5KP26
5KP26A
5KP28
5KP28A
5KP30
5KP30A
Breakdown Voltage
V(BR)
(Volts) (NOTE 1)
MIN MAX
6.40 7.30
6.40 7.00
6.67 8.15
6.67 7.37
7.22 8.82
7.22 7.98
7.78 9.51
7.78 8.60
8.33 10.2
8.33 9.21
8.89 10.9
8.89 9.83
9.44 11.5
9.44 10.4
10.0 12.2
10.0 11.1
11.1 13.6
11.1 12.3
12.2 14.9
12.2 13.5
13.3 16.3
13.3 14.7
14.4 17.6
14.4 15.9
15.6 19.1
15.6 17.2
16.7 20.4
16.7 18.5
17.8 21.8
17.8 19.7
18.9 23.1
18.9 20.9
20.0 24.4
20.0 22.1
22.2 27.1
22.2 24.5
24.4 29.8
24.4 26.9
26.7 32.6
26.7 29.5
28.9 35.3
28.9 31.9
31.1 38.0
31.1 34.4
33.3 40.7
33.3 36.8
Test
Current
at IT
(mA)
50
50
50
50
50
50
50
50
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Stand-off
Voltage
VWM
(Volts)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
20.0
20.0
22.0
22.0
24.0
24.0
26.0
26.0
28.0
28.0
30.0
30.0
Maximum
Reverse
Leakage
at VWM
ID (µA)
2000
2000
5000
5000
2000
2000
1000
1000
250
250
150
150
50.0
50.0
20.0
20.0
15.0
15.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
Maximum
Peak Pulse
Current
IPPM
(NOTE 2)
(Amps)
521
543
439
485
407
446
376
417
350
388
333
368
314
347
296
325
266
294
249
275
227
251
210
233
194
216
186
205
174
192
164
181
155
171
140
154
127
141
116
129
107
119
100
110
93.5
103
Maximum
Clamping
Voltage at
IPPM
VC (Volts)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.4
53.5
48.4
Maximum
Temperature
Coefficient
of V(BR)
(% / °C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.078
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103









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5KP110 Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS at (TA=25°C unless otherwise noted) TABLE 1 (Cont’d)
Device Type
5KP33
5KP33A
5KP36
5KP36A
5KP40
5KP40A
5KP43
5KP43A
5KP45
5KP45A
5KP48
5KP48A
5KP51
5KP51A
5KP54
5KP54A
5KP58
5KP58A
5KP60
5KP60A
5KP64
5KP64A
5KP70
5KP70A
5KP75
5KP75A
5KP78
5KP78A
5KP85
5KP85A
5KP90
5KP90A
5KP100
5KP100A
5KP110
5KP110A
Breakdown Voltage
V(BR)
(Volts) (NOTE 1)
MIN MAX
36.7 44.9
36.7 40.6
40.0 48.9
40.0 44.2
44.4 54.3
44.4 49.1
47.8 58.4
47.8 52.8
50.0 61.1
50.0 55.3
53.3 65.2
53.3 58.9
56.1 69.3
56.7 62.7
60.0 73.3
60.0 66.3
64.4 78.7
64.4 71.2
66.7 81.5
66.7 73.7
71.1 96.9
71.1 78.6
77.6 95.1
77.8 86.0
83.3 102
83.3 92.1
86.7 106.0
86.7 95.8
94.4 115
94.4 104
100 122
100 111
111 136
111 123
122 149
122 135
Test
Current
at IT
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Stand-off
Voltage
VWM
(Volts)
33.0
33.0
36.0
36.0
40.0
40.0
43.0
43.0
45.0
45.0
48.0
48.0
51.0
51.0
54.0
54.0
58.0
58.0
60.0
60.0
64.0
64.0
70.0
70.0
75.0
75.0
78.0
78.0
85.0
85.0
90.0
90.0
100
100
110
110
Maximum
Reverse
Leakage
at VWM
ID (µA)
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
Maximum
Peak Pulse
Current
IPPM
(NOTE 2)
(Amps)
84.7
93.8
77.8
86.1
70.0
77.5
65.2
72.0
62.3
68.8
58.5
64.6
54.9
60.7
51.9
57.4
48.5
53.4
46.7
51.7
43.9
48.5
40.0
44.2
37.3
41.3
36.0
39.7
33.1
36.5
31.3
34.2
27.9
30.9
25.5
28.2
Maximum
Clamping
Voltage at
IPPM
VC (Volts)
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
94
107
97
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
Maximum
Temperature
Coefficient
of V(BR)
(% / °C)
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.112
0.112
NOTES:
(1) V(BR) measured after IT applied for 300µs IT=square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All items and symbols are consistent with ANSI/IEEE C62.35
APPLICATION
The 5KP series of high power transient voltage suppressors were designed to be used on the output of switching power supplies. These devices may be used to replace
crowbar circuits. Both the 5 and 10 percent voltage tolerances are referenced to the power supply output voltage level.
They are able to withstand high levels of peak current while allowing a circuit breaker to trip or a fuse blow before shorting. This will enable the user to reset the breaker or
replace the fuse and continue operation. For this type operation, it is recommended that a sufficient mounting surface be used for dissipating the heat generated by the
Transient Voltage Suppressor during the transient or over-voltage condition.
Transient Voltage Suppressors are Silicon PN Junction devices designed for absorption of high voltage transients associated with power disturbances, switching and
induced lighting effects. This series is available from 5.0 volts thru 110 volts.










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