5HP01M PDF даташит
Спецификация 5HP01M изготовлена «Sanyo Semicon Device» и имеет функцию, называемую « Ultrahigh-Speed Switching Applications». |
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Детали детали
Номер произв | 5HP01M |
Описание | Ultrahigh-Speed Switching Applications |
Производители | Sanyo Semicon Device |
логотип |
4 Pages
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Ordering number : ENN6134
5HP01M
P-Channel Silicon MOSFET
5HP01M
Ultrahigh-Speed Switching Applications
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2158
[5HP01M]
0.3
3
0.15
0 to 0.1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0
VDS=--50V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--100µA
VDS=--10V, ID=--40mA
ID=--40mA, VGS=--10V
ID=--20mA, VGS=--4V
12
0.65 0.65
2.0
0.3
0.9
0.6
1 : Gate
2 : Source
3 : Drain
SANYO : MCP
Ratings
--50
±20
--0.07
--0.28
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
min
--50
--1
50
Ratings
typ
max
Unit
V
--10 µA
±10 µA
--2.5 V
70 mS
17 22 Ω
23 32 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72600 TS IM TA-1969No.6134-1/4
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Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Diode Forward Voltage
Marking : XC
5HP01M
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=--10V, VGS=--10V, ID=--70mA
VDS=--10V, VGS=--10V, ID=--70mA
VDS=--10V, VGS=--10V, ID=--70mA
IS=--70mA, VGS=0
Switching Time Test Circuit
0V VIN
--10V
VIN
PW=10µs
D.C.≤1%
VDD= --25V
ID= --40mA
RL=625Ω
D VOUT
G
5HP01M
P.G 50Ω S
Ratings
min typ max
Unit
6.2 pF
4.0 pF
1.3 pF
13 ns
10 ns
100 ns
150 ns
1.32
nC
0.17
nC
0.34
nC
0.85
1.2 V
ID -- VDS
--0.07
--0.06
--0.05
--4.0V
--0.04
--0.03
--0.02
--3.0V
--0.01
0
0
50
45
VGS= --2.5V
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Drain-to-Source Voltage, VDS -- V IT00103
RDS(on) -- VGS
Ta=25°C
40
35
30
--40mA
25
ID= --20mA
20
15
10
--2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V IT00105
--0.14
--0.12
--0.10
--0.08
--0.06
--0.04
--0.02
0
0
100
7
5
ID -- VGS
VDS= --10V
--1 --2 --3 --4
--5 --6
Gate-to-Source Voltage, VGS -- V
RDS(on) -- ID
IT00104
VGS= --10V
3
2
10
--0.01
Ta=75°C
25°C
--25°C
23
5 7 --0.1
Drain Current, ID -- A
23
IT00106
No.6134-2/4
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1000
7
5
3
2
100
7
5
3
2
10
--0.01
1.0
7
5
3
2
0.1
7
5
3
2
RDS(on) -- ID
5HP01M
VGS= --4V
25°C
Ta=75°C
--25°C
23
5 7 --0.1
Drain Current, ID -- A
yfs -- ID
23
IT00107
VDS= --10V
Ta= --25°C
75°C
25°C
RDS(on) -- Ta
40
35
30
25
20
I
D=
I
-D-2=0-m-4A0,mVAG, SV=G--S4=V--10V
15
10
5
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT00108
IF -- VSD
3
VGS = 0
2
--0.1
7
5
3
2
0.01
--0.01
1000
7
5
3
2
23
5 7 --0.1
Drain Current, ID -- A
SW Time -- ID
23
IT00109
VDD= --25V
VGS= --10V
tf
100
7
td(off)
5
3
2 td(on)
10
7
tr
5
3
2
1.0
--0.01
--10
VDS= --10V
--9 ID= --0.07A
--8
23
5
Drain Current, ID -- A
VGS -- Qg
7 --0.1
IT00111
--7
--6
--5
--4
--3
--2
--1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg -- nC
IT00113
--0.01
--0.5
100
7
5
3
2
--0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2
Diode Forward Voltage, VSD -- V
IT00110
Ciss, Coss, Crss -- VDS
f=1MHz
10
7
5
3
2
1.0
7
5
3
2
0.1
0
0.20
Ciss
Coss
Crss
--5 --10 --15 --20 --25 --30 --35 --40 --45 --50
Drain-to-Source Voltage, VDS -- V IT00112
PD -- Ta
0.15
0.10
0.05
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02381
No.6134-3/4
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