5DL2CZ47A PDF даташит
Спецификация 5DL2CZ47A изготовлена «Toshiba Semiconductor» и имеет функцию, называемую «SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK». |
|
Детали детали
Номер произв | 5DL2CZ47A |
Описание | SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK |
Производители | Toshiba Semiconductor |
логотип |
5 Pages
No Preview Available ! |
5DL2CZ47A,5FL2CZ47A,5GL2CZ47A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
5DL2CZ47A, 5FL2CZ47A, 5GL2CZ47A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Unit: mm
z Repetitive Peak Reverse Voltage : VRRM = 200 V, 300 V, 400V
z Average Output Rectified Current : IO = 5 A
z Ultra Fast Reverse-Recovery Time : trr = 35 ns (Max)
z Low Switching Losses and Output Noise.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
5DL2CZ47A
200
Repetitive Peak
Reverse Voltage
5FL2CZ47A
VRRM
300
V
5GL2CZ47A
400
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sin Wave)
Junction Temperature
Storage Temperature Range
Screw Torque
IO
IFSM
Tj
Tstg
―
5
25 (50Hz)
27.5 (60Hz)
−40~150
−40~150
0.6
A
A
°C
°C
N·m
JEDEC
JEITA
TOSHIBA
Weight: 2.0 g
―
―
12−10C1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
Peak Forward
Voltage (Note 1)
5DL2CZ47A
5FL2CZ47A
5GL2CZ47A
Repetitive Peak
Reverse Current
(Note 1)
5DL2CZ47A
5FL2CZ47A
5GL2CZ47A
Reverse Recovery Time
(Note 1)
Forward Recovery Time
(Note 1)
Thermal Resistance
VFM
IRRM
trr
tfr
Rth (j−c)
Note 1: A value applied to one cell.
TEST CONDITION
IFM = 2.5A
VRRM = Rated
IF = 2A, di / dt = −20A / μs
IF = 1A
Total DC, Junction to Case
TYP.
―
―
―
―
―
―
―
―
―
MAX UNIT
0.98
1.3
1.8
10
10
50
35
100
3.8
V
μA
ns
ns
°C / W
POLARITY
1 2006-11-08
No Preview Available ! |
MARKING
5DL2CZ
Characteristics
indicator
5DL2CZ47A,5FL2CZ47A,5GL2CZ47A
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Abbreviation Code
5DL2CZ
5FL2CZ
5GL2CZ
Part No.
5DL2CZ47A
5FL2CZ47A
5GL2CZ47A
Handling Precaution
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
VRRM:
We recommend that the worst case voltage, including surge voltage, be no greater than 80% of the
absolute maximum rating of VRRM for a DC circuit and be no greater than 50% of that of VRRM for
an AC circuit. VRRM has a temperature coefficient of 0.1%/°C. Take this temperature coefficient into
account designing a device at low temperature.
IO: We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of IO. Carry out adequate heat design. If you can’t design a circuit with excellent heat radiation, set
the margin by using an allowable Tamax-IO curve.
This rating specifies the non-repetitive peak current in one cycle of a 50-Hz sine wave, condition angle 180.
Therefore, this is only applied for an abnormal operation, which seldom occurs during the lifespan of the device.
We recommend that a device be used at a Tj of below 120°C under the worst load and heat radiation conditions.
Please refer to the Rectifiers databook for further information.
2 2006-11-08
No Preview Available ! |
5DL2CZ47A,5FL2CZ47A,5GL2CZ47A
3 2006-11-08
Скачать PDF:
[ 5DL2CZ47A.PDF Даташит ]
Номер в каталоге | Описание | Производители |
5DL2CZ47A | SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK | Toshiba Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |