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M27C2001-12XB1X PDF даташит

Спецификация M27C2001-12XB1X изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «2 Mbit 256Kb x 8 UV EPROM and OTP EPROM».

Детали детали

Номер произв M27C2001-12XB1X
Описание 2 Mbit 256Kb x 8 UV EPROM and OTP EPROM
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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M27C2001-12XB1X Даташит, Описание, Даташиты
M27C2001
2 Mbit (256Kb x 8) UV EPROM and OTP EPROM
s 5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
s FAST ACCESS TIME: 55ns
s LOW POWER CONSUMPTION:
– Active Current 30mA at 5MHz
– Standby Current 100µA
s PROGRAMMING VOLTAGE: 12.75V ± 0.25V
s PROGRAMMING TIME: 100µs/byte (typical)
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 61h
DESCRIPTION
The M27C2001 is a high speed 2 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large pro-
grams and is organised as 262,144 by 8 bits.
The FDIP32W (window ceramic frit-seal package)
and LCCC32W (leadless chip carrier package)
have a transparent lids which allow the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M27C2001 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.
Table 1. Signal Names
A0-A17
Address Inputs
Q0-Q7
Data Outputs
E Chip Enable
G Output Enable
P Program
VPP Program Supply
VCC Supply Voltage
VSS Ground
32
1
FDIP32W (F)
32
1
PDIP32 (B)
LCCC32W (L)
PLCC32 (K)
Figure 1. Logic Diagram
TSOP32 (N)
8 x 20 mm
VCC VPP
18
A0-A17
8
Q0-Q7
P M27C2001
E
G
VSS
AI00716B
April 1999
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M27C2001-12XB1X Даташит, Описание, Даташиты
M27C2001
Figure 2A. DIP Pin Connections
VPP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
VSS
1 32
2 31
3 30
4 29
5 28
6 27
7 26
8 25
M27C2001
9 24
10 23
11 22
12 21
13 20
14 19
15 18
16 17
VCC
P
A17
A14
A13
A8
A9
A11
G
A10
E
Q7
Q6
Q5
Q4
Q3
AI00717
Figure 2C. TSOP Pin Connections
A11
A9
A8
A13
A14
A17
P
VCC
VPP
A16
A15
A12
A7
A6
A5
A4
1 32
8 M27C2001 25
9 (Normal) 24
16 17
AI01153B
G
A10
E
Q7
Q6
Q5
Q4
Q3
VSS
Q2
Q1
Q0
A0
A1
A2
A3
Figure 2B. LCC Pin Connections
A7
A6
A5
A4
A3 9
A2
A1
A0
Q0
1 32
M27C2001
17
A14
A13
A8
A9
25 A11
G
A10
E
Q7
AI00718
The operationg modes of the M27C2001 are listed
in the Operating Modes table. A single power sup-
ply is required in the read mode. All inputs are TTL
levels except for VPP and 12V on A9 for Electronic
Signature.
Read Mode
The M27C2001 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable (G) is the output control and should
be used to gate data to the output pins, indepen-
dent of device selection. Assuming that the ad-
dresses are stable, the address access time
(tAVQV) is equal to the delay from E to output
(tELQV). Data is available at the output after a delay
of tGLQV from the falling edge of G, assuming that
E has been low and the addresses have been sta-
ble for at least tAVQV-tGLQV.
Standby Mode
The M27C2001 has a standby mode which reduc-
es the supply current from 30mA to 100µA. The
M27C2001 is placed in the standby mode by ap-
plying a CMOS high signal to the E input. When in
the standby mode, the outputs are in a high imped-
ance state, independent of the G input.
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M27C2001-12XB1X Даташит, Описание, Даташиты
M27C2001
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA Ambient Operating Temperature (3)
–40 to 125
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
VIO (2)
Input or Output Voltage (except A9)
–2 to 7
V
VCC Supply Voltage
–2 to 7
V
VA9 (2)
A9 Voltage
–2 to 13.5
V
VPP Program Supply Voltage
–2 to 14
V
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns.
3. Depends on range.
Table 3. Operating Modes
Mode
Read
Output Disable
Program
Verify
Program Inhibit
Standby
Electronic Signature
Note: X = VIH or VIL, VID = 12V ± 0.5V.
E
VIL
VIL
VIL
VIL
VIH
VIH
VIL
G P A9 VPP Q0-Q7
VIL X
X VCC or VSS Data Out
VIH X
X
VCC or VSS
Hi-Z
VIH VIL Pulse
X
VPP Data In
VIL VIH X VPP Data Out
X X X VPP Hi-Z
X
X
X
VCC or VSS
Hi-Z
VIL
VIH
VID
VCC
Codes
Table 4. Electronic Signature
Ide ntifie r
A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data
Manufacturer’s Code
VIL
0
0
1
0
0
0
0
0
20h
Device Code
VIH 0 1 1 0 0 0 0 1
61h
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
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