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9474 PDF даташит

Спецификация 9474 изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «POWER SCHOTTKY RECTIFIER».

Детали детали

Номер произв 9474
Описание POWER SCHOTTKY RECTIFIER
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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9474 Даташит, Описание, Даташиты
® STPS3150/U
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
3A
150 V
175°C
0.66 V
FEATURES AND BENEFITS
s NEGLIGIBLE SWITCHING LOSSES
s LOW FORWARD VOLTAGE DROP FOR
HIGHER EFFICIENCY AND EXTENDED
BATTERY LIFE
s LOW THERMAL RESISTANCE
DO-201AD
STPS3150
DESCRIPTION
150V Power Schottky rectifier are suited for switch
Mode Power Supplies on up to 24V rails and high
frequency converters.
Packaged in SMB and Axial, this device is
intended for use in consumer & computer
applications like TV, STB, PC and DVD where low
drop forward voltage in required to reduce power
dissipation.
ABSOLUTE RATINGS (limiting values)
SMB
STPS3150U
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
IF(AV) Average forward current
TL = 130°C δ = 0.5 SMB
TL = 140°C δ = 0.5 DO-201AD
IFSM Surge non repetitive forward current Half wave, single SMB
phase, 50Hz
DO-201AD
Tstg Storage temperature range
Tj Maximum junction temperature *
dV/dt Critical rate of rise of reverse voltage (rated VR, Tj = 25°C)
Value
150
15
3
Unit
V
A
A
100 A
150
- 65 to + 150 °C
175 °C
10000 V/µs
* : dPtot <
1 thermal runaway condition for a diode on its own heatsink
dTj Rth( j a)
April 2003 - Ed: 1A
1/5









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9474 Даташит, Описание, Даташиты
STPS3150/U
THERMAL RESISTANCES
Symbol
Rth(j-l) Junction to leads
Parameter
Lead length = 10 mm
DO-1201AD
SMB
Value
20
15
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
Min.
IR * Reverse leakage current Tj = 25°C
VR = 150V
VF * Forward voltage drop
Tj = 125°C
Tj = 25°C
IF = 3 A
Tj = 125°C
Tj = 25°C
IF = 6 A
Tj = 125°C
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.59 x IF(AV) + 0.023 x IF2(RMS)
Typ.
0.4
0.6
0.78
0.63
0.85
0.70
Max.
2.0
2.0
0.82
0.67
0.89
0.75
Unit
µA
mA
V
Fig. 1: Conduction losses versus average current.
PF(AV)(W)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.5
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ=1
T
IF(AV)(A)
δ=tp/T
tp
1.0 1.5 2.0 2.5 3.0 3.5
Fig. 3-1: Non repetitive surge peak forward current
versus overload duration (maximum values)
(SMB).
IM(A)
12
11 SMB
10
9
8
7 Ta=25°C
6
Ta=75°C
5
4
3
2 IM
1
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
Ta=125°C
1.E+00
2/5
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
IF(AV)(A)
3.5
3.0
Rth(j-a)=Rth(j-I)
DO-201AD
2.5 SMB
2.0
1.5 Rth(j-a)=75°C/W
1.0
0.5
0.0
0
T
δ=tp/T
25
tp
50
Tamb(°C)
75 100 125 150 175
Fig. 3-2: Non repetitive surge peak forward current
versus overload duration (maximum values)
(DO-201AD).
IM(A)
14
DO-201AD
12
10 Ta=25°C
8
6
4
IM
2
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
Ta=75°C
Ta=125°C
1.E+00









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9474 Даташит, Описание, Даташиты
STPS3150/U
Fig. 4-1: Relative variation of thermal impedance
junction to ambient versus pulse duration (SMB).
Zth(j-c)/Rth(j-c)
1.0
SMB
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3 δ = 0.2
0.2 δ = 0.1
0.1
0.0
1.E-02
Single pulse
1.E-01
tp(s)
1.E+00
1.E+01
T
δ=tp/T
1.E+02
tp
1.E+03
Fig. 4-2: Relative variation of thermal impedance
junction to ambient versus pulse duration
(DO-201AD).
Zth(j-c)/Rth(j-c)
1.0
DO-201AD
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
0.0
1.E-01
Single pulse
1.E+00
tp(s)
1.E+01
T
δ=tp/T
1.E+02
tp
1.E+03
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1.E+04
1.E+03
1.E+02
1.E+01
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
1.E+00
Tj=50°C
1.E-01
1.E-02
0
Tj=25°C
VR(V)
25 50 75 100 125 150
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
C(nF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
10
1
VR(V)
10 100
1000
Fig. 7: Forward voltage drop versus forward
current.
IFM(A)
100
10
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
Tj=25°C
(maximum values)
VFM(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Fig. 8: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, Cu: 35µm) (SMB).
Rth(j-a)(°C/W)
110
100 SMB
90
80
70
60
50
40
30
20
10 S(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
3/5










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9474POWER SCHOTTKY RECTIFIERSTMicroelectronics
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