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FDP6644 PDF даташит

Спецификация FDP6644 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «30V N-Channel PowerTrench MOSFET».

Детали детали

Номер произв FDP6644
Описание 30V N-Channel PowerTrench MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FDP6644 Даташит, Описание, Даташиты
June 2001
FDP6644/FDB6644
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
50 A, 30 V.
RDS(ON) = 8.5 m@ VGS = 10 V
RDS(ON) = 10.5 m@ VGS = 4.5 V
Low gate charge (27 nC typical)
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
175°C maximum junction temperature rating
DD
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
– Pulsed
(Note 1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB6644
FDB6644
13’’
FDP6644
FDP6644
Tube
G
Ratings
30
± 16
50
150
83
0.55
-65 to +175
1.8
62.5
Tape width
24mm
n/a
S
Units
V
V
A
A
W
W/°C
°C
°C/W
°C/W
Quantity
800 units
45
©2001 Fairchild Semiconductor Corporation
FDP6644 Rev C(W)









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FDP6644 Даташит, Описание, Даташиты
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
W DSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 15 V,
ID = 25 A
IAR Maximum Drain-Source Avalanche
Current
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
IGSSF
Gate–Body Leakage, Forward
VGS = 16 V, VDS = 0 V
IGSSR
Gate–Body Leakage, Reverse
VGS = –16 V, VDS = 0 V
30
240 mJ
25 A
V
26 mV/°C
1
100
–100
µA
NA
NA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V,
ID = 25A
VGS = 4.5 V, ID = 25 A
VGS= 10 V, ID = 25 A, TJ=125°C
VGS = 10 V,
VDS = 5 V
VDS = 5 V,
ID = 25 A
1
60
1.5 3
V
–5 mV/°C
6.4 8.5
7.3 10.5
9.3 15
98
m
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
3068
513
196
pF
pF
pF
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 15 V,
VGS = 4.5 V
ID = 25 A,
12.5
8
54
14
27
9
7
22.5
16
86
26
38
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 25 A (Note 2)
50
0.8 1.3
A
V
Notes:
1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDP6644 Rev C(W)









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FDP6644 Даташит, Описание, Даташиты
Typical Characteristics
50
VGS = 10V
6.0V
40
4.5V
3.0V
30
20
2.5V
10
0
0 0.5 1
VDS, DRAIN-SOURCE VOLTAGE (V)
1.5
Figure 1. On-Region Characteristics.
2.2
ID =25A
1.8 VGS = 10V
1.4
1
0.6
0.2
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
80
VDS = 5V
60
TA = -55oC
25oC
125oC
40
20
0
1 1.5 2 2.5 3 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
1.8
VGS = 3.0V
1.6
1.4
3.5V
1.2 4.0V
4.5V
6.0V
1 10V
0.8
0
10 20 30 40
ID, DRAIN CURRENT (A)
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.02
0.016
0.012
TA = 125oC
ID = 12A
0.008
TA = 25oC
0.004
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
TA = 125oC
0.1
0.01
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6644 Rev C(W)










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