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Datasheet FDN361AN Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FDN361AN | N-Channel/ Logic Level/ PowerTrench FDN361AN
April 1999
FDN361AN
N-Channel, Logic Level, PowerTrenchΤΜ
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for supe |  Fairchild Semiconductor | data |
FDN Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FDN302 | P-Channel 2.5V Specified PowerTrench MOSFET FDN302P
October 2000
FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive vol Fairchild Semiconductor mosfet | | |
| 2 | FDN302P | P-Channel 2.5V Specified PowerTrench MOSFET FDN302P
October 2000
FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive vol Fairchild Semiconductor mosfet | | |
| 3 | FDN304P | P-Channel 1.8V Specified PowerTrench MOSFET FDN304P
June 2000 PRELIMINARY
FDN304P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
• –2.4 A, –20 Fairchild Semiconductor mosfet | | |
| 4 | FDN304PZ | P-Channel 1.8V Specified PowerTrench MOSFET FDN304PZ
March 2003
FDN304PZ
P-Channel 1.8V Specified PowerTrench® MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
• –2.4 A, –20 V. RDS(ON) Fairchild Semiconductor mosfet | | |
| 5 | FDN306P | P-Channel 1.8V Specified PowerTrench MOSFET FDN306P
December 2001
FDN306P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
• –2.6 A, –12 V. RDS(O Fairchild Semiconductor mosfet | | |
| 6 | FDN308P | P-Channel 2.5V Specified PowerTrench MOSFET FDN308P
February 2001
FDN308P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive vo Fairchild Semiconductor mosfet | | |
| 7 | FDN327N | N-Channel 1.8 Vgs Specified PowerTrench MOSFET FDN327N
October 2001
FDN327N
N-Channel 1.8 Vgs Specified PowerTrench® MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.
Features
• 2 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) Fairchild Semiconductor mosfet | |
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