DataSheet26.com

даташит FDN308P PDF ( Datasheet )

FDN308P Datasheet Download - Fairchild Semiconductor

Номер произв FDN308P
Описание P-Channel 2.5V Specified PowerTrench MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 



1Page
		

No Preview Available !

FDN308P Даташит, Описание, Даташиты
February 2001
FDN308P
P-Channel 2.5V Specified PowerTrenchMOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
Power management
Load switch
Battery protection
Features
–20 V, –1.5 A. RDS(ON) = 125 m@ VGS = –4.5 V
RDS(ON) = 190 m@ VGS = –2.5 V
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
D
D
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
Maximum Power Dissipation
PD
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
308
FDN308P
7’’
GS
Ratings
–20
±12
–1.5
–10
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDN308P Rev B(W)







No Preview Available !

FDN308P Даташит, Описание, Даташиты
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = –250 µA
ID = –250 µA,Referenced to 25°C
VDS = –16 V,
VGS = 12 V,
VGS = –12 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = –250 µA
ID = –250 µA,Referenced to 25°C
VGS = –4.5 V, ID = –1.5 A
VGS = –2.5 V, ID = –1.3 A
VGS = –4.5 V, ID = –1.5A TJ=125°C
VGS = –4.5 V, VDS = –5 V
VDS = –5 V,
ID = –1.5 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
VDD = –10 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6
VDS = –10V,
VGS = –4.5 V
ID = –1.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = –0.42 (Note 2)
Voltage
–20
–0.6
–5
–13
–1.0
3
86
136
114
12
341
83
43
8
10
12
8
3.8
0.8
1.0
–0.7
V
mV/°C
–1
100
–100
µA
nA
nA
–1.5 V
mV/°C
125 m
190
178
A
S
pF
pF
pF
16 ns
20 ns
22 ns
16 ns
5.4 nC
nC
nC
–0.42
–1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDN308P Rev B(W)







No Preview Available !

FDN308P Даташит, Описание, Даташиты
Typical Characteristics
10
VGS = -4.5V
-4.0V
8
-3.5V -3.0V
6 -2.5V
4
2 -2.0V
0
0123
-VDS, DRAIN-SOURCE VOLTAGE (V)
4
2
1.8
VGS = -2.5V
1.6
1.4
-3.0V
1.2 -3.5V
-4.0V
-4.5V
1
0.8
0
2468
-ID, DRAIN CURRENT (A)
10
Figure 1. On-Region Characteristics.
1.5
1.4
ID = -1.5A
VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
10
VDS = - 5V
8
6
TA = -55oC
25oC
125oC
4
2
0
0.5
1 1.5 2 2.5 3
-VGS, GATE TO SOURCE VOLTAGE (V)
3.5
Figure 5. Transfer Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.34
0.3
0.26
0.22
0.18
0.14
0.1
0.06
1
ID = -0.8 A
TA = 125oC
TA = 25oC
234
-VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
TA = 125oC
0.01
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN308P Rev B(W)










Всего страниц 5 Pages
Скачать PDF[ FDN308P.PDF Даташит ]

Ссылка Поделиться


Related Datasheets

Номер в каталогеОписаниеПроизводители
FDN308PP-Channel 2.5V Specified PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor

Номер в каталоге Описание Производители
6MBP200RA-060

Intelligent Power Module

Fuji Electric
Fuji Electric
ADF41020

18 GHz Microwave PLL Synthesizer

Analog Devices
Analog Devices
AN-SY6280

Low Loss Power Distribution Switch

Silergy
Silergy

DataSheet26.com    |    2020    |   Контакты    |    Поиск