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FDH047AN08A0 PDF даташит

Спецификация FDH047AN08A0 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m».

Детали детали

Номер произв FDH047AN08A0
Описание N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FDH047AN08A0 Даташит, Описание, Даташиты
June 2004
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
N-Channel PowerTrench® MOSFET
75V, 80A, 4.7m
Features
• rDS(ON) = 4.0m(Typ.), VGS = 10V, ID = 80A
• Qg(tot) = 92nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82684
Applications
• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
TO-220AB
FDP SERIES
DRAIN TO-262AB
(FLANGE) FDI SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 144oC, VGS = 10V)
Continuous (TC = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 1)
Power dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220, TO-262, TO-247
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
Thermal Resistance Junction to Ambient TO-247 (Note 2)
SOURCE
DRAIN
GATE
DRAIN G
(FLANGE)
TO-247
FDH SERIES
Ratings
75
±20
80
15
Figure 4
475
310
2.0
-55 to 175
0.48
62
30
D
S
Units
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2004 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C









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FDH047AN08A0 Даташит, Описание, Даташиты
Package Marking and Ordering Information
Device Marking
FDP047AN08A0
FDI047AN08A0
FDH047AN08A0
Device
FDP047AN08A0
FDI047AN08A0
FDH047AN08A0
Package
TO-220AB
TO-262AB
TO-247
Reel Size
Tube
Tube
Tube
Tape Width
N/A
N/A
N/A
Quantity
50 units
50 units
30 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 60V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 80A, VGS = 10V
ID = 37A, VGS = 6V
ID = 80A, VGS = 10V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 40V
ID = 80A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
Turn-On Delay Time
tr Rise Time
td(OFF)
Turn-Off Delay Time
tf Fall Time
tOFF
Turn-Off Time
VDD = 40V, ID = 80A
VGS = 10V, RGS = 3.3
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 0.232mH, IAS = 64A.
2: Pulse Width = 100s
ISD = 80A
ISD = 40A
ISD = 75A, dISD/dt = 100A/µs
ISD = 75A, dISD/dt = 100A/µs
Min Typ Max Units
75 - - V
- -1
µA
- - 250
- - ±100 nA
2 - 4V
- 0.0040 0.0047
- 0.0058 0.0087
- 0.0082 0.011
- 6600 -
pF
- 1000 -
pF
- 240 -
pF
92 138 nC
- 11 17 nC
- 27 - nC
- 16 - nC
- 21 - nC
- - 160 ns
- 18 - ns
- 88 - ns
- 40 - ns
- 45 - ns
- - 128 ns
- - 1.25 V
- - 1.0 V
- - 53 ns
- - 54 nC
©2004 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C









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FDH047AN08A0 Даташит, Описание, Даташиты
Typical Characteristics TC = 25°C unless otherwise noted
1.2 200
CURRENT LIMITED
1.0 BY PACKAGE
160
0.8
120
0.6
80
0.4
0.2 40
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
10-5
SINGLE PULSE
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
Figure 3. Normalized Maximum Transient Thermal Impedance
101
2000
1000
VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
50
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2004 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C










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