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FDC606P PDF даташит

Спецификация FDC606P изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «P-Channel 1.8V Specified PowerTrench MOSFET».

Детали детали

Номер произв FDC606P
Описание P-Channel 1.8V Specified PowerTrench MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FDC606P Даташит, Описание, Даташиты
December 2001
FDC606P
P-Channel 1.8V Specified PowerTrenchMOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Applications
Battery management
Load switch
Battery protection
Features
–6 A, –12 V.
RDS(ON) = 26 m@ VGS = –4.5 V
RDS(ON) = 35 m@ VGS = –2.5 V
RDS(ON) = 53 m@ VGS = –1.8 V
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
S
D
D
SuperSOT TM-6
G
DD
16
25
34
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.606
FDC606P
7’’
Ratings
–12
±8
–6
–20
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDC606P Rev E (W)









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FDC606P Даташит, Описание, Даташиты
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V,
ID = –250 µA
ID = –250 µA,Referenced to 25°C
VDS = –10 V,
VGS = 8 V,
VGS = –8 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = –250 µA
ID = –250 µA,Referenced to 25°C
VGS = –4.5 V,
VGS = –2.5 V,
VGS = –1.8 V,
ID = –6 A
ID = –5 A
ID = –4 A
VGS = –4.5 V, ID = –6 A,TJ=125°C
VGS = –4.5 V, VDS = –5 V
VDS = –5 V,
ID = –6 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –6 V,
f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = –6 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6
VDS = –6 V,
VGS = –4.5 V
ID = –6 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = –1.3 A (Note 2)
Voltage
–12
–3
V
mV/°C
–1
100
–100
µA
nA
nA
–0.4 –0.5 –1.5
V
2.5 mV/°C
21 26 m
26 35
34 53
28 35
–20 A
25 S
1699
679
423
pF
pF
pF
11 19
10 20
89 142
70 112
18 25
3
4.2
ns
ns
ns
ns
nC
nC
nC
–1.3
–0.6 –1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDC606P Rev E (W)









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FDC606P Даташит, Описание, Даташиты
Typical Characteristics
20
VGS = -4.5V
-3.0V
15
-2.5V
-1.8V
10
-1.5V
5
0
0 0.5 1 1.5 2 2.5 3
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.3
ID = -6A
VGS = -4.5V
1.2
1.1
1
0.9
0.8
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
20
VDS = -5V
15
TA = -55oC
25oC
125oC
10
5
0
0.5
0.75 1 1.25 1.5 1.75
-VGS, GATE TO SOURCE VOLTAGE (V)
2
Figure 5. Transfer Characteristics.
2.6
2.4 VGS=-1.5V
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
-1.8V
-2.0V
-2.5V
-3.0V
5 10 15
-ID, DRAIN CURRENT (A)
-4.5V
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.08
ID = -3A
0.07
0.06
0.05
0.04
TA = 125oC
0.03
0.02
TA = 25oC
0.01
1
234
-VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC606P Rev E (W)










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FDC606PP-Channel 1.8V Specified PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor

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