3SK166A-2 PDF даташит
Спецификация 3SK166A-2 изготовлена «Sony Corporation» и имеет функцию, называемую «GaAs N-channel Dual Gate MES FET». |
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Детали детали
Номер произв | 3SK166A-2 |
Описание | GaAs N-channel Dual Gate MES FET |
Производители | Sony Corporation |
логотип |
5 Pages
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3SK166A
GaAs N-channel Dual Gate MES FET
For the availability of this product, please contact the sales office.
Description
The 3SK166A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. The
circuit matching is easier to be made for all UHF
band, resulting in the excellent performance, due to
the optimal design of input impedance.
Features
• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz
• High gain: Ga = 20dB (typ) at 800MHz
• High stability
Application
UHF band amplifier, oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage
VDSX
8
• Gate 1 to source voltage
VG1S
–6
• Gate 2 to source voltage
VG2S
–6
• Drain current
ID 80
• Allowable power dissipation PD
150
• Channel temperature
Tch 150
• Storage temperature
Tstg –55 to +150
V
V
V
mA
mW
°C
°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E96Y11-PS
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3SK166A
Electrical Characteristics
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
Associated gain
∗ IDSS classification
Symbol
Condition
IDSX
VDS = 8V
VG1S = –4V
VG2S = 0V
IG1SS
VG1S = –5V
VG2S = 0V
VDS = 0V
IG2SS
VG2S = –5V
VG1S = 0V
VDS = 0V
IDSS
VDS = 5V
VG1S = 0V
VG2S = 0V
VDS = 5V
VG1S (OFF) ID = 100µA
VG2S = 0V
VDS = 5V
VG2S (OFF) ID = 100µA
VG1S = 0V
VDS = 5V
gm
ID = 10mA
VG2S = 1.5V
f = 1kHz
Ciss
Crss
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1MHz
NF
VDS = 5V
ID = 10mA
Ga
VG2S = 1.5V
f = 800MHz
Product name classification
3SK166A-0
3SK166A-2
IDSS RANK
20 to 80mA
45 to 80mA
(Ta = 25°C)
Min. Typ. Max. Unit
100 µA
–20 µA
–20 µA
20 80 mA
–1 –4 V
–1 –4 V
25 40
ms
1.3 2.0 pF
25 40 fF
1.2 2.5 dB
18 20
dB
Typical Characteristics (Ta = 25°C)
ID vs. VDS
100
(VG2S = 1.5V)
80
60
40
20
0
02 46
VDS – Drain to source voltage [V]
VG1S
= 0V
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
–1.2V
–1.4V
–1.6V
8
–2–
100
(VDS = 5V)
ID vs. VG1S
80
70
60
40
20
–2.0
–1.5 –1.0 –0.5
VG1S – Gate 1 to source voltage [V]
VG2S
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.5V
0
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3SK166A
100
(VDS = 5V)
ID vs. VG2S
80
60
40
20
0
–2.0
–1.5 –1.0 –0.5
VG2S – Gate 2 to source voltage [V]
NF vs. VG1S
6
(VDS = 5V, f = 800MHz)
5
VG1S
= 0V
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
–1.2V
–1.4V
0
4
3
2 VG2S = 0.5V
1.0V
1.5V
1
0
–1.8 –1.7 –1.6 –1.5 –1.4 –1.3 –1.2 –1.1 –1.0 –0.9
VG1S – Gate 1 to source voltage [V]
NF, Ga vs. ID
3.0
(VDS = 5V, VG2S = 1.5V, f = 800MHz)
2.5
Ga
2.0
30
25
20
1.5 15
NF
1.0 10
0.5 5
00
0 2 4 6 8 10 12 14 16 18 20 22
ID – Drain current [mA]
100
(VDS = 5V)
gm vs. VG1S
80
60
VG2S
= 1.5V
1.0V
50
40
20
–2.0
–1.5 –1.0 –0.5
VG1S – Gate 1 to source voltage [V]
0.5V
0V
–0.5V
–1.0V
0
Ga vs. VG1S
30
(VDS = 5V, f = 800MHz)
25
VG2S = 1.5V
1.0V
20 1.5V
15
10
5
0
–1.8 –1.7 –1.6 –1.5 –1.4 –1.3 –1.2 –1.1 –1.0 –0.9
VG1S – Gate 1 to source voltage [V]
NF, Ga vs. f
3.0 30
(VDS = 5V, VG2S = 1.5V, ID = 10mA)
2.5
Ga
2.0
25
20
1.5 15
1.0
NFmin
0.5
10
5
00
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
f – Frequency [GHz]
–3–
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Номер в каталоге | Описание | Производители |
3SK166A-0 | GaAs N-channel Dual Gate MES FET | Sony Corporation |
3SK166A-2 | GaAs N-channel Dual Gate MES FET | Sony Corporation |
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