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3N171 PDF даташит

Спецификация 3N171 изготовлена ​​​​«Linear Technology» и имеет функцию, называемую «N-CHANNEL MOSFET ENHANCEMENT MODE».

Детали детали

Номер произв 3N171
Описание N-CHANNEL MOSFET ENHANCEMENT MODE
Производители Linear Technology
логотип Linear Technology логотип 

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3N171 Даташит, Описание, Даташиты
Linear Integrated Systems
3N170 3N171
N-CHANNEL MOSFET
ENHANCEMENT MODE
FEATURES
Direct Replacement for INTERSIL 3N170 & 3N171
LOW DRAIN TO SOURCE RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS1
rds(on) 200
td(on) 3.0ns
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation
300mW
Maximum Current
Drain to Source
30mA
Maximum Voltages
Drain to Gate
±35V
Drain to Source
25V
Gate to Source
±35V
TO-72
BOTTOM VIEW
G 2 3D
S 1 4C
* Body tied to Case.
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
BVDSS
VDS(on)
VGS(th)
Drain to Source Breakdown Voltage
Drain to Source "On" Voltage
Gate to Source
Threshold Voltage
3N170
3N171
25
1.0
1.5
ID = 10µA, VGS = 0V
2.0 V ID = 10mA, VGS = 10V
2.0
2.0
VDS = 10V, ID = 10µA
IGSS
IDSS
ID(on)
gfs
rds(on)
Crss
Ciss
Cdb
Gate Leakage Current
Drain Leakage Current "Off"
Drain Current "On"
Forward Transconductance
Drain to Source "On" Resistance
Reverse Transfer Capacitance
Input Capacitance
Drain to Body Capacitance
10
1000
10 pA VGS = -35V, VDS = 0V
10 nA VDS = 10V, VGS = 0V
mA VGS = 10V, VDS = 10V
µS VDS = 10V, ID = 2.0mA, f = 1.0kHz
200 VGS = 10V, ID = 0A, f = 1.0kHz
1.3 VDS = 0V, VGS = 0V, f = 1.0MHz
5.0 pF VDS = 10V, VGS = 0V, f = 1.0MHz
5.0 VDB = 10V, f = 1.0MHz
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261









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3N171 Даташит, Описание, Даташиты
SWITCHING CHARACTERISTICS
SYMBOL CHARACTERISTIC
td(on)
tr
td(off)
tf
Turn On Delay Time
Turn On Rise Time
Turn Off Delay Time
Turn Off Fall Time
MIN
TYP MAX UNITS
3.0
10 ns
3.0
15
CONDITIONS
VDD = 10V, ID(on) = 10mA,
VGS(on) = 10V, VGS(off) = 0V
RG = 50
TO-72
Four Lead
0.195 DIA.
0.175
0.030
MAX.
0.230 DIA.
0.209
0.150
0.115
4 LEADS
0.019 DIA.
0.016
0.500 MIN.
0.100
0.050
2
13
45° 4
0.046
0.036
0.048
0.028
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261










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Номер в каталогеОписаниеПроизводители
3N170N-Channel Enhancement Mode MOSFET SwitchCalogic  LLC
Calogic LLC
3N170N-CHANNEL MOSFET ENHANCEMENT MODELinear Technology
Linear Technology
3N170N-CHANNEL MOSFET ENHANCEMENT MODELinear Integrated Systems
Linear Integrated Systems
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