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Datasheet 3N170 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 3N170 | N-Channel Enhancement Mode MOSFET Switch N-Channel Enhancement Mode MOSFET Switch
CORPORATION
3N170 / 3N171
FEATURES HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device while wiring, testing, or in actu |  Calogic LLC | mosfet |
| 2 | 3N170 | N-CHANNEL MOSFET ENHANCEMENT MODE 3N170 3N171
Linear Integrated Systems
FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Con |  Linear Technology | mosfet |
| 3 | 3N170 | N-CHANNEL MOSFET ENHANCEMENT MODE 3N170 3N171
Linear Integrated Systems
FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Con |  Linear Integrated Systems | mosfet |
| 4 | 3N170 | MOSFETs Switching |  Motorola Semiconductor | mosfet |
| 5 | 3N170 | High Speed Switch 3N170 N-CHANNEL MOSFET
The 3N170 is an enhancement mode N-Channel Mosfet
The 3N170 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. (See Pac |  Micross | data |
3N1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3N100E | MTB3N100E MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB3N100E/D
Designer's
TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package whi  Motorola Semiconductors data | | |
| 2 | 3N121 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | | |
| 3 | 3N123 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | | |
| 4 | 3N128 | MOSFET AMPLIFIER MAXIMUM RATINGS
Rating Drain-Source Voltage
Drain-Gate Voltage Gate-Source Voltage
Drain Current
@Total Device Dissipation T/^ = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol vDs vDg vgs
id
Pd
Tj, Tstg
Value + 20 + 20 ±10 50 330 2.2
-65 to +175
Unit
Vdc Vdc Vdc Motorola Semiconductors amplifier | | |
| 5 | 3N128 | Silicon MOS Transistor General Electric Solid State transistor | | |
| 6 | 3N128 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | | |
| 7 | 3N129 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | |
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