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PDF 3N166 Data sheet ( Hoja de datos )
| Número de pieza | 3N166 | |
| Descripción | Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier | |
| Fabricantes | Calogic LLC | |
| Logotipo |  |
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Monolithic Dual P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
3N165 / 3N166
CORPORATION
FEATURES
Very High Impedance
• High Gate Breakdown
•• Low Capacitance
PIN CONFIGURATION
TO-99
G2
2506 C G1
D2
D1 S
BOTTOM VIEW
S
D2 D1
G2 G1
C
0180
DEVICE SCHEMATIC
1
7
35
ABSOLUTE MAXIMUM RATINGS (Note 1)
(TA = 25oC unless otherwise specified)
Drain-Source or Drain-Gate Voltage (Note 2)
3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Transient Gate-Source Voltage (Note 3) . . . . . . . . . . . . . ±125
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V
Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation
One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW
Total Derating above 25oC. . . . . . . . . . . . . . . . . . 4.2mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
3N165-66
X3N165-66
Package
Hermetic TO-99
Sorted Chips in Carriers
Temperature Range
-55oC to +150oC
-55oC to +150oC
84
0190
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
IGSSR
Gate Reverse Leakage Current
10 VGS = 40V
IGSSF
Gate Forward Leakage Current
-10 VGS = -40V
-25 pA
TA = +125oC
IDSS Drain to Source Leakage Current
-200
VDS = -20V
ISDS Source to Drain Leakage Current
-400
VSD = -20V, VDB = 0
ID(on)
On Drain Current
-5 -30 mA VDS = -15V, VGS = -10V
VGS(th)
VGS(th)
Gate Source Threshold Voltage
Gate Source Threshold Voltage
-2 -5
VDS = -15V, ID = -10µA
V
-2 -5
VDS = VGS, ID = -10µA
rDS(on)
Drain Source ON Resistance
300 ohms VGS = -20V, ID = -100µA
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 3N166.PDF ] | |
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