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PDF 2SK3389 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3389 | |
| Descripción | Switching Regulator/ DC-DC Converter Applications Motor Drive Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK3389 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3389
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3389
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 70 S (typ.)
• Low leakage current: IDSS = 100 µA (VDS = 30 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
(Note 1)
Pulse
(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±30
75
300
125
731
75
12.5
150
−55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
Rth (ch-c)
Max
1.00
Unit
°C/W
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
4
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 95 µH, IAR = 75 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2
3
1 2002-03-04
1 page  
2SK3389
rth – tw
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
Single
0.0001
0.001
0.01
Pulse width tw (s)
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.0°C/W
0.1 1
10
Safe operating area
1000
ID max (pulsed) *
100 µs *
100
ID max
(continuous)
10
1 ms *
DC operation
Tc = 25°C
*: Single nonrepetitive pulse
1 Tc = 25°C
Curves must be derated
linearly with increase in
temperature
0.1
0.1
1
VDSS max
10
Drain-source voltage VDS (V)
100
1000
800
EAS – Tch
600
400
200
0
25 50
75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
0V
Test circuit
RG = 25 Ω
VDD = 25 V, L = 95 µH
BVDSS
IAR
VDD
VDS
Waveform
ΕAS
=
1
2
⋅L ⋅I2
⋅
BVDSS
BVDSS − VDD
5 2002-03-04
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK3389.PDF ] | |
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