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2SK3358 PDF даташит

Спецификация 2SK3358 изготовлена ​​​​«NEC» и имеет функцию, называемую «SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE».

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Номер произв 2SK3358
Описание SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Производители NEC
логотип NEC логотип 

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2SK3358 Даташит, Описание, Даташиты
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3358
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3358 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on)1 = 30 mMAX. (VGS = 10 V, ID = 28 A)
5 RDS(on)2 = 40 mMAX. (VGS = 4.5 V, ID = 20 A)
5 Low Ciss: Ciss = 3200 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3358
TO-220AB
2SK3358-S
TO-262
2SK3358-Z
TO-220SMD
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
Drain Current (DC)
5 Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
100
±20
+20, 10
±55
±165
100
1.5
150
–55 to +150
39
152
V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
Notes 1. PW 10 µs, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V
(TO-220SMD)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.25 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14322EJ1V0DS00 (1st edition)
Date Published April 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999









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2SK3358 Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
5 Drain to Source On-state Resistance
5
5 Gate to Source Cut-off Voltage
5 Forward Transfer Admittance
SYMBOL
TEST CONDITIONS
RDS(on)1 VGS = 10 V, ID = 28 A
RDS(on)2
VGS(off)
VGS = 4.5 V, ID = 20 A
VDS = 10 V, ID = 250 µA
| yfs | VDS = 10 V, ID = 28 A
Drain Leakage Current
IDSS VDS = 100 V, VGS = 0 V
Gate to Source Leakage Current
5 Input Capacitance
IGSS VGS = ±20 V, VDS = 0 V
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
ID = 28 A
Rise Time
tr VGS(on) = 10 V
Turn-off Delay Time
td(off)
VDD = 50 V
Fall Time
tf RG = 10
Total Gate Charge
QG ID = 55 A
Gate to Source Charge
QGS
VDD = 80
Gate to Drain Charge
QGD
VGS(on) = 10 V
Body Diode Forward Voltage
VF(S-D) IF = 55 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 55 A, VGS = 0 V
Qrr di/dt = 100 A / µs
2SK3358
MIN. TYP. MAX. UNIT
20 30 m
28 40 m
1.5 2.0 2.5 V
17 35
S
10 µA
±10 µA
3200
pF
640 pF
360 pF
40 ns
300 ns
220 ns
230 ns
84 nC
11 nC
31 nC
1.0 V
160 ns
760 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
VGS(on) 90 %
ID 90 %
ID 0 10 %
Wave Form
ID
90 %
10 %
td(on) tr td(off) tf
ton toff
2 Preliminary Data Sheet D14322EJ1V0DS00









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2SK3358 Даташит, Описание, Даташиты
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
10.6 MAX.
10.0
φ 3.6±0.2
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
2SK3358
2)TO-262 (MP-25 Fin Cut)
4.8 MAX.
(10) 1.3±0.2
4
123
1.3±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
3)TO-220SMD (MP-25Z)
(10)
4
4.8 MAX.
1.3±0.2
1.4±0.2
1.0±0.3
(0.5(0R.)8R)
2.54 TYP. 1 2 3 2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Preliminary Data Sheet D14322EJ1V0DS00
3










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