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2SK3305-S PDF даташит

Спецификация 2SK3305-S изготовлена ​​​​«NEC» и имеет функцию, называемую «SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE».

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Номер произв 2SK3305-S
Описание SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Производители NEC
логотип NEC логотип 

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2SK3305-S Даташит, Описание, Даташиты
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3305
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3305 is N-Channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge:
QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)
Gate voltage rating: ±30 V
Low on-state resistance
RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A)
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3305
2SK3305-S
2SK3305-ZJ
TO-220AB
TO-262
TO-263
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
500
±30
±5
±20
75
1.5
150
–55 to +150
5.0
125
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 , VGS = 20 V ¡ 0 V
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14003EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
©
1998,2000









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2SK3305-S Даташит, Описание, Даташиты
2SK3305
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain Leakage Current
IDSS VDS = 500 V, VGS = 0 V
Gate to Source Leakage Current
IGSS VGS = ±30 V, VDS = 0 V
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 2.5 A
Drain to Source On-state Resistance
RDS(on) VGS = 10 V, ID = 2.5 A
Input Capacitance
Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
Rise Time
td(on)
tr
VDD = 150 V, ID = 2.5 A, VGS(on) = 10 V,
RG = 10 Ω, RL = 60
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG VDD = 400 V, VGS = 10 V, ID = 5.0 A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Body Diode Forward Voltage
VF(S-D) IF = 5.0 A, VGS = 0 V
Reverse Recovery Time
trr IF = 5.0 A, VGS = 0 V, di/dt = 50 A / µs
Reverse Recovery Charge
Qrr
MIN. TYP. MAX. UNIT
100 µA
±100 nA
2.5 3.5 V
1.0 3.0
S
1.3 1.5
700 pF
115 pF
6 pF
16 ns
3 ns
33 ns
5.5 ns
13 nC
4 nC
4.5 nC
0.9 V
0.6 µs
3.3 µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG. RG
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
ID
ID
Wave Form
0 10 %
VGS(on)
90 %
ID
90 %
90 %
10 %
td(on)
tr td(off)
tf
ton toff
2 Data Sheet D14003EJ1V0DS00









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2SK3305-S Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - ˚C
Figure3. FORWARD BIAS SAFE OPERATING AREA
100
ID (pulse) PW
10
1
Tc
=
RDS (on)
25 ˚C
Limited
ID (DC)
Power
Dissi1p0atmios1nmLsi1m0i0teµds
=
10
µs
0.1 Single Pulse
1 10 100 1000
VDS - Drain to Source Voltage - V
1000
Figure5. DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Pulsed
100
10
1
0.1
0.01
0.001
0
TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
5 10
VGS - Gate to Source Voltage - V
15
2SK3305
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - ˚C
Figure4. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
10 10 V
8
VGS = 20 V
8.0 V
6
4 VGS = 6.0 V
2
0 4 8 12 16
VDS - Drain to Source Voltage - V
Data Sheet D14003EJ1V0DS00
3










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Номер в каталогеОписаниеПроизводители
2SK3305-SSWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USENEC
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2SK3305-ZJSWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USENEC
NEC

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