(PDF) 2SK3082 Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK3082
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK3082(L),2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 ADE-208-637 (Z) 2nd. Edition May 1998 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 1 page Body–Drain Diode Reverse Recovery Time 500 di / dt = 50 A / µs 200 VGS = 0, Ta = 25 °C 100 50 20 10 5 0.1 0.2 0.5 1 2 5 10 20 Reverse Drain Current I DR (A) 2SK3082(L),2SK3082(S) 1000 500 200 100 Typical Capacitance vs. Drain to Source Voltage Ciss Coss 50 Crss 20 VGS = 0 f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 100 I D = 10A 80 60 VDS V DD = 10 V 25 V 50 V 40 VGS 20 16 12 8 20 V DD = 50 V 25 V 4 10 V 0 0 4 8 12 16 20 Gate Charge Qg (nc) 1000 Switching Characteristics 300 100 t d(off) 30 t f t d(on) 10 tr 3 1 0.1 0.2 VGS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 0.5 1 2 5 10 20 Drain Current I D (A) 5 5 Page

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PDF 2SK3082 Data sheet ( Hoja de datos )