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2SK3076L PDF даташит

Спецификация 2SK3076L изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв 2SK3076L
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

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2SK3076L Даташит, Описание, Даташиты
2SK3076(L),2SK3076(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
High speed switching
Low drive current.
Built-in fast recovery diode (trr=120 ns)
Outline
LDPAK
D
G
S
ADE-208-656 (Z)
1st. Edition
Jun 1998
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain









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2SK3076L Даташит, Описание, Даташиты
2SK3076(L),2SK3076(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
ID
Drain peak current
I Note1
D(pulse)
Body-drain diode reverse drain current IDR
Channel dissipation
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
Ratings
500
±30
7
28
7
60
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current IDSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
500
±30
2.0
Forward transfer admittance
Input capacitance
|yfs|
Ciss
3.5
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
Note: 4. Pulse test
Typ Max Unit Test Conditions
——V
ID = 10mA, VGS = 0
——V
IG = ±100µA, VDS = 0
±10 µA
VGS = ±25V, VDS = 0
250 µA
VDS = 400 V, VGS = 0
— 3.0 V
ID = 1mA, VDS = 10V
0.7 0.9
ID = 4A, VGS = 10VNote4
6.0 —
S
ID = 4A, VDS = 10V Note4
1100 — pF VDS = 10V
310 — pF VGS = 0
50 — pF f = 1MHz
15 — ns ID =4A, VGS = 10V
55 — ns RL = 7.5
100 —
ns
48 — ns
0.9 —
V
IF = 7A, VGS = 0
120 — ns IF = 7A, VGS = 0
diF/ dt =100A/µs
2









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2SK3076L Даташит, Описание, Даташиты
Main Characteristics
2SK3076(L),2SK3076(S)
Power vs. Temperature Derating
80
60
40
20
0 50 100 150 200
Case Temperature Tc (°C)
Maximum Safe Operation Area
100
30
10
3
1
0.3
OtlihmpisietearadretibDoayCnisROiPnpWDeSr=a(to1io0nn)m(Tsc(1=1sm2h15o0s°t0)C10µ) sµs
0.1
0.03
0.01 Ta = 25 °C
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
20
10 V
4V 6V
16
Pulse Test
12
5V
8
4
VGS = 4 V
0 10 20 30 40 50
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
20
–25°C
Ta = 25°C
16
12 75°C
8
4
V DS = 20 V
Pulse Test
0 2 4 6 8 10
Gate to Source Voltage V GS (V)
3










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Номер в каталогеОписаниеПроизводители
2SK3076Silicon N Channel MOS FET High Speed Power SwitchingHitachi Semiconductor
Hitachi Semiconductor
2SK3076LSilicon N Channel MOS FET High Speed Power SwitchingHitachi Semiconductor
Hitachi Semiconductor
2SK3076SSilicon N Channel MOS FET High Speed Power SwitchingHitachi Semiconductor
Hitachi Semiconductor

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