(PDF) 2SK3070 Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK3070
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline ADE-208-684G (Z) 8th. Edition February 1999 LDPAK D G S 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 Pulse Test 0.4 0.3 I D = 50 A 0.2 0.1 10 A 20 A 0 4 8 12 16 20 Gate to Source Voltage V GS (V) Datasheet Title Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 10 VGS = 4 V 5 10 V 2 1 1 3 10 30 100 300 1000 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 12 I D = 50 A 8 VGS = 10 V 10, 20 A 4 4V 10, 20, 50 A 0 –50 0 50 100 150 200 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 500 V DS = 10 V 200 Pulse Test 100 50 Tc = –25 °C 20 10 5 2 1 0.5 0.1 25 °C 75 °C 0.3 1 3 10 30 Drain Current I D (A) 100 5 5 Page

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PDF 2SK3070 Data sheet ( Hoja de datos )