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2SK3062-S Datasheet Download - NEC

Номер произв 2SK3062-S
Описание SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Производители NEC
логотип NEC логотип 
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2SK3062-S Даташит, Описание, Даташиты
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3062
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on)1 = 8.5 mMAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 12 mMAX. (VGS = 4.0 V, ID = 35 A)
Low Ciss: Ciss = 5200 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3062
TO-220AB
2SK3062-S
TO-262
2SK3062-ZJ
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
+20, 10
±70
±280
100
1.5
150
–55 to +150
35
122.5
V
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.25 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13101EJ1V0DS00 (1st edition)
Date Published April 1999 NS CP(K)
Printed in Japan
©
1998,1999

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2SK3062-S Даташит, Описание, Даташиты
2SK3062
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 35 A
RDS(on)2 VGS = 4.0 V, ID = 35 A
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 35 A
Drain Leakage Current
IDSS VDS = 60 V, VGS = 0 V
Gate to Source Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
ID = 35 A
Rise Time
tr VGS(on) = 10 V
Turn-off Delay Time
Fall Time
td(off)
tf
VDD = 30 V
RG = 10
Total Gate Charge
QG ID = 70 A
Gate to Source Charge
QGS
VDD = 48 V
Gate to Drain Charge
QGD
VGS(on) = 10 V
Body Diode Forward Voltage
VF(S-D) IF = 70 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 70 A, VGS = 0 V
Qrr di/dt = 100 A / µs
MIN. TYP. MAX. UNIT
6.3 8.5 m
8.2 12 m
1.0 1.5 2.0 V
20 87
S
10 µA
±10 µA
5200
pF
1300
pF
480 pF
75 ns
1150
ns
360 ns
480 ns
95 nC
13 nC
30 nC
0.97 V
70 ns
140 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG.
RG
RG = 10
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
ID
ID
Wave Form
0 10 %
VGS(on)
90 %
ID
90 %
90 %
10 %
td(on)
tr td(off)
tf
ton toff
2 Data Sheet D13101EJ1V0DS00

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2SK3062-S Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
RDS(on)
Limited(@VIDGS(D=C1)0=V7)0
A
DC
ID(pulse)=280 A
PW = 10
1
100
ms
µs
Dissipa1ti0o0n1mL0ismmisted
µs
TC = 25˚C
1 Single Pulse
0.1
1
10 100
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
TA = 125˚C
75˚C
10 25˚C
25˚C
1
0.1
0
Pulsed
VDS = 10 V
12345
VGS - Gate to Source Voltage - V
2SK3062
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
200 VGS = 10 V
VGS = 4.0 V
100
0 1 234
VDS - Drain to Source Voltage - V
Data Sheet D13101EJ1V0DS00
3






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