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PDF 2SK3062-S Data sheet ( Hoja de datos )
| Número de pieza | 2SK3062-S | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3062
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low on-state resistance
RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
• Low Ciss: Ciss = 5200 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3062
TO-220AB
2SK3062-S
TO-262
2SK3062-ZJ
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
+20, −10
±70
±280
100
1.5
150
–55 to +150
35
122.5
V
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.25 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13101EJ1V0DS00 (1st edition)
Date Published April 1999 NS CP(K)
Printed in Japan
©
1998,1999
1 page  
2SK3062
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
VGS = 4.0 V
15
10 V
10
5
0 ID = 35 A
−50 0 50 100 150
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
VGS = 0 V
f = 1 MHz
10
Ciss
1
0.1
0.1
Coss
Crss
1 10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1 10
IF - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100 VGS = 4.0 V
0V
10
1
0.1
0
Pulsed
0.5 1 1.5
VSD - Source to Drain Voltage - V
10000
1000
100
SWITCHING CHARACTERISTICS
VDS = 30 V
VGS = 10 V
RG = 10 Ω
tr
td(off)
tf
td(on)
10
0.1
1 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
ID = 70 A
14
60 12
VDD = 12 V
10
30 V
40
48 V
8
6
20 4
2
0
0 25 50 75 100
QG - Gate Charge - nC
Data Sheet D13101EJ1V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3062-S.PDF ] | |
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