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PDF 2SK3058-ZJ Data sheet ( Hoja de datos )
| Número de pieza | 2SK3058-ZJ | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3058
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super Low On-State Resistance
RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A)
RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A)
• Low Ciss : Ciss = 2100 pF (TYP.)
• Built-in Gate Protection Diode
ORDERING INFORMATION
PART NUMBER
2SK3058
2SK3058-S
2SK3058-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0)
VDSS
60
Gate to Source Voltage (VDS = 0)
VGSS(AC)
±20
Gate to Source Voltage (VDS = 0)
VGSS(DC)
+20, –10
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±55
±165
Total Power Dissipation (TC = 25°C)
PT
58
Total Power Dissipation (TA = 25°C)
PT
1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to + 150
IAS 27.5
EAS 75.6
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
2.16 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13097EJ1V0DS00 (1st edition)
Date Published April 1999 NS CP(K)
Printed in Japan
©
1998, 1999
1 page  
2SK3058
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
VGS = 4.0 V
30
20
VGS = 10 V
10
0 ID = 28 A
−50 0 50 100 150
Tch - Channel Temperature - ˚C
100 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
10 000
1 000
100
0.1
Ciss
Coss
Crss
1 10 100
VDS - Drain to Source Voltage - V
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1 10
IF - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
10
1
0.1
0
VGS = 0 V
0.5 1
Pulsed
1.5
VSD - Source to Drain Voltage - V
10 000
SWITCHING CHARACTERISTICS
VDD = 30 V
VGS = 10 V
RG = 10 Ω
1 000
100
10
0.1
tr
tf
td(off)
td(on)
1 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
ID = 55 A
14
60
VDD = 12 V
30 V
48 V
40
12
10
8
6
20 4
2
0
0 20 40 60 80
QG - Gate Charge - nC
Data Sheet D13097EJ1V0DS00
5
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