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2SK3056-ZJ PDF даташит

Спецификация 2SK3056-ZJ изготовлена ​​​​«NEC» и имеет функцию, называемую «SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE».

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Номер произв 2SK3056-ZJ
Описание SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Производители NEC
логотип NEC логотип 

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2SK3056-ZJ Даташит, Описание, Даташиты
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3056
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low On-State Resistance
RDS(on)1 = 34 mMAX. (VGS = 10 V, ID = 16 A)
RDS(on)2 = 50 mMAX. (VGS = 4.0 V, ID = 16 A)
Low Ciss : Ciss = 920 pF TYP.
Built-in Gate Protection Diode
ORDERING INFORMATION
PART NUMBER
2SK3056
2SK3056-S
2SK3056-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
+20, 10
±32
±100
34
1.5
150
–55 to +150
16
25.6
V
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
3.68 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13095EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
Printed in Japan
©
1998,1999









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2SK3056-ZJ Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 16 A
RDS(on)2 VGS = 4.0 V, ID = 16 A
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 16 A
Drain Leakage Current
IDSS VDS = 60 V, VGS = 0 V
Gate to Source Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
ID = 16 A
Rise Time
tr VGS(on) = 10 V
Turn-off Delay Time
td(off)
VDD = 30 V
Fall Time
tf RG = 10
Total Gate Charge
QG ID = 32 A
Gate to Source Charge
QGS
VDD = 48 V
Gate to Drain Charge
QGD
VGS = 10 V
Body Diode Forward Voltage
VF(S-D) IF = 32 A, VGS = 0 V
Reverse Recovery Time
trr If = 32A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100A/µs
2SK3056
MIN. TYP. MAX. UNIT
24 34 m
35 50 m
1.0 1.5 2.0 V
8.0 20
S
10 µA
±10 µA
920 pF
280 pF
120 pF
25 ns
300 ns
70 ns
120 ns
25 nC
3.3 nC
7.0 nC
1.0 V
50 ns
68 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG.
RG
RG = 10
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
ID
ID
Wave Form
0 10 %
VGS(on)
90 %
ID
90 %
90 %
10 %
td(on)
tr td(off)
tf
ton toff
2 Data Sheet D13095EJ1V0DS00









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2SK3056-ZJ Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
1
ID(pulse) = 100 A PW
=10 V)
RDS(on) Limited (VGS
TC = 25˚C
ID(DC) = 32 A
100 µs
1 ms
Power DissipaD1ti0oC10n0mLmimssited
= 10 µs
Single Pulse
0.1 1 10
100
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
VDS = 10 V
10
1
0.1
0
TA = -25˚C
25˚C
75˚C
125˚C
24 6
VGS - Gate to Source Voltage - V
8
2SK3056
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
80
60
VGS =10 V
40
VGS = 4.0 V
20
Pulsed
0
12
3
VDS - Drain to Source Voltage - V
Data Sheet D13095EJ1V0DS00
3










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2SK3056-ZJSWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USENEC
NEC

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