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2SK3044 PDF даташит

Спецификация 2SK3044 изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «Silicon N-Channel Power F-MOS FET».

Детали детали

Номер произв 2SK3044
Описание Silicon N-Channel Power F-MOS FET
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

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2SK3044 Даташит, Описание, Даташиты
Power F-MOS FETs
2SK3044
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 130mJ
q VGSS = ±30V guaranteed
q High-speed switching: tf = 50ns
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
VDSS
VGSS
ID
IDP
EAS*
450
±30
±7
±14
100
Allowable power
dissipation
TC = 25°C
Ta = 25°C PD
40
2
Channel temperature
Storage temperature
Tch 150
Tstg 55 to +150
* L = 4.1mH, IL = 8A, VDD = 50V, 1 pulse
Unit
V
V
A
A
mJ
W
°C
°C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance RDS(on)
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time (delay time)
td(on)
Rise time
tr
Turn-off time (delay time)
td(off)
Fall time
tf
VDS = 360V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 4A
VDS = 25V, ID = 4A
IDR = 8A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 4A
VDD = 150V, RL = 37.5
9.9±0.3
unit: mm
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.3
1 2 3 5.08±0.5
1: Gate
2: Drain
3: Source
TO-220D Package
min typ max Unit
0.1 mA
±1 µA
450 V
2 5V
0.56 0.75
35
S
1.7 V
1300
pF
160 pF
70 pF
25 ns
45 ns
150 ns
50 ns
1









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2SK3044 Даташит, Описание, Даташиты
Power F-MOS FETs
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
t=10µs
10
3 DC
1 100µs
1ms
0.3
10ms
0.1
100ms
0.03
0.01
1 3 10 30 100 300 1000
Drain to source voltage VDS (V)
ID VDS
16
14 VGS=15V
10V
12 7V
TC=25˚C
10
8
6V
6
4 5.5V
2
5V
50W
0
0 10 20 30 40 50 60
Drain to source voltage VDS (V)
RDS(on) ID
2.4
VGS=10V
2.0
1.6
1.2 TC=150˚C
100˚C
0.8
25˚C
0.4
0˚C
0
0 2 4 6 8 10
Drain current ID (A)
PD Ta
60
(1) TC=Ta
(2) Without heat sink
50
40
(1)
30
20
10
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID VGS
10
VDS=25V
25˚C 100˚C
8
TC=0˚C 150˚C
6
4
2
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
RDS(on) ID
2.4
TC=25˚C
2.0
1.6
1.2
0.8
VGS=10V
15V
0.4
0
0 2 4 6 8 10
Drain current ID (A)
2SK3044
EAS Tj
100
80
60
40
20
0
25 50 75 100 125 150 175
Junction temperature Tj (˚C)
Vth TC
6
VDS=25V
ID=1mA
5
4
3
2
1
0
0 25 50 75 100 125 150
Case temperature TC (˚C)
| Yfs | ID
12
VDS=25V
TC=25˚C
10
8
6
4
2
0
0 2 4 6 8 10
Drain current ID (A)
2









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2SK3044 Даташит, Описание, Даташиты
Power F-MOS FETs
10000
3000
1000
Ciss, Coss, Crss VDS
f=1MHz
TC=25˚C
Ciss
300
100
Coss
30
10 Crss
3
1
0 50 100 150 200 250
Drain to source voltage VDS (V)
VDS, VGS Qg
400 16
ID=8A
350 TC=25˚C 14
300 12
250 VDS
200
10
8
150 6
100
VGS
50
4
2
00
0 10 20 30 40 50 60
Gate charge amount Qg (nC)
Rth(t) t
102
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
10
(1)
(2)
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2SK3044
td(on), tr, tf, td(off) ID
300
VDD=150V
VGS=10V
250 TC=25˚C
200
150
100
50
0
0
td(off)
tf
tr
td(on)
2468
Drain current ID (A)
10
3










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