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Número de pieza | 2SK3034 | |
Descripción | Silicon N-Channel Power F-MOS FET | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK3034 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! Power F-MOS FETs
2SK3034 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
q Low-voltage drive
q High electrostatic breakdown voltage
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage VDSS 100 V
Gate to Source voltage
VGSS
±20
V
Drain current
DC
Pulse
ID
IDP
±40 A
±80 A
Avalanche energy capacity
EAS*
80
mJ
Allowable power
dissipation
TC = 25°C
Ta = 25°C PD
60
W
2
Channel temperature
Storage temperature
Tch 150 °C
Tstg
−55 to +150
°C
* L = 0.1mH, IL = 40A, 1 pulse
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance
RDS(on)1
RDS(on)2
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time (delay time)
td(on)
Rise time
tr
Fall time
tf
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case Rth(ch-c)
Thermal resistance between channel and atmosphere Rth(ch-a)
VDS = 80V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 20A
VGS = 4V, ID = 20A
VDS = 10V, ID = 20A
IDR = 20A, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VDD = 30V, ID = 20A
VGS = 10V, RL = 1.5Ω
9.9±0.3
φ3.2±0.1
unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7 123
1: Gate
2: Drain
3: Source
TO-220E Package
Internal Connection
G
D
S
min typ max Unit
10 µA
±10 µA
100 V
1 2.5 V
23 35 mΩ
27 40 mΩ
S
−1.3 V
3600
pF
850 pF
360 pF
15 ns
40 ns
150 ns
930 ns
2.08 °C/W
62.5 °C/W
1
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 2SK3034.PDF ] |
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