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PDF 2SK3024 Data sheet ( Hoja de datos )

Número de pieza 2SK3024
Descripción Silicon N-Channel Power F-MOS FET
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SK3024 Hoja de datos, Descripción, Manual

Power F-MOS FETs
2SK3024 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
q Low-voltage drive
q High electrostatic breakdown voltage
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage VDSS 60 V
Gate to Source voltage
VGSS
±20
V
Drain current
DC
Pulse
ID
IDP
±20 A
±40 A
Avalanche energy capacity
EAS*
20
mJ
Allowable power
dissipation
TC = 25°C
Ta = 25°C PD
20
W
1
Channel temperature
Storage temperature
Tch 150 °C
Tstg
55 to +150
°C
* L = 0.1mH, IL = 20A, 1 pulse
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance
RDS(on)1
RDS(on)2
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time (delay time)
td(on)
Rise time
tr
Fall time
tf
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case Rth(ch-c)
Thermal resistance between channel and atmosphere Rth(ch-a)
VDS = 50V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 10A
VGS = 4V, ID = 10A
VDS = 10V, ID = 10A
IDR = 20A, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VDD = 30V, ID = 10A
VGS = 10V, RL = 3
6.5±0.1
5.3±0.1
4.35±0.1
unit: mm
2.3±0.1
0.5±0.1
0.93±0.1
1.0±0.1
0.1±0.05
0.5±0.1
2.3±0.1
4.6±0.1
0.75±0.1
123
Internal Connection
G
1: Gate
2: Drain
3: Source
U Type Package
D
S
min typ max Unit
10 µA
±10 µA
60 V
1 2.5 V
33 50 m
44 70 m
8 12
S
1.5 V
330 pF
290 pF
70 pF
20 ns
125 ns
520 ns
1480
ns
6.25 °C/W
125 °C/W
1

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