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PDF 2SK2922 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2922 | |
| Descripción | Silicon N Channel MOS FET UHF Power Amplifier | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK2922 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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2SK2922
Silicon N Channel MOS FET
UHF Power Amplifier
Features
• High power output, High gain, High efficiency
PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz)
• Compact package capable of surface mounting
Outline
UPAK
ADE-208-675(Z)
1st. Edition
Aug. 1998
21
3
4
1. Gate
2. Source
3. Drain
4. Source
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
1 page  
Reverse Transfer Capacitance vs.
Drain to Gate Votage
10
V GS = 0
f = 1 MHz
5
2
1
0.1 0.2
0.5 1
2
Drain to Gate Voltege V
5 10
(V)
2SK2922
Output Power, Drain Rational
vs. Input Power
2.5 100
2.0 η D 80
Po
1.5 60
1.0 40
V DS = 4.7 V
0.5 I DO = 150 mA 20
f = 836.5MHz
0
0 100 200 300 400 500
Input power Pin (mW)
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SK2922.PDF ] | |
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