2SK2735L PDF даташит
Спецификация 2SK2735L изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching». |
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Детали детали
Номер произв | 2SK2735L |
Описание | Silicon N Channel MOS FET High Speed Power Switching |
Производители | Hitachi Semiconductor |
логотип |
7 Pages
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2SK2735(L), 2SK2735(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS = 20 mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D
G
S
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
ADE-208-543
1st. Edition
No Preview Available ! |
2SK2735(L), 2SK2735(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
30
±20
20
80
20
20
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2
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2SK2735(L), 2SK2735(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown V(BR)DSS
30
—
—
V
voltage
ID = 10mA, VGS = 0
Gate to source breakdown V(BR)GSS ±20 — — V
voltage
IG = ±100µA, VDS = 0
Gate to source leak current
Zero gate voltege drain
current
I GSS
I DSS
—
—
±10 µA
VGS = ±16V, VDS = 0
— — 10 µA VDS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
RDS(on)
Forward transfer admittance |yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
1.0 —
2.0 V
ID = 1mA, VDS = 10V
— 20 28 mΩ ID = 10A, VGS = 10V*1
— 35 50 mΩ ID = 10A, VGS = 4V*1
8 16 — S ID = 10A, VDS = 10V*1
— 750 — pF VDS = 10V
— 520 — pF VGS = 0
— 210 — pF f = 1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
— 16 — ns ID = 10A, VGS = 10V
— 225 — ns RL = 1Ω
— 85 — ns
— 90 — ns
— 1.0 — V
IF = 20A, VGS = 0
diF/ dt = 50A/µs
Body to drain diode reverse trr
recovery time
— 40 — V
IF = 20A, VGS = 0
diF/ dt = 50A/µs
Note: 1. Pulse test
See characteristics curves of 2SK2684
3
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Номер в каталоге | Описание | Производители |
2SK2735 | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
2SK2735L | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
2SK2735S | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
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