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2SK2625LS PDF даташит

Спецификация 2SK2625LS изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «Ultrahigh-Speed Switching Applications».

Детали детали

Номер произв 2SK2625LS
Описание Ultrahigh-Speed Switching Applications
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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2SK2625LS Даташит, Описание, Даташиты
Ordering number : ENN7081
Preliminary
Features
Low ON-resistance.
Low Qg.
2SK2625LS
N-Channel Silicon MOSFET
2SK2625LS
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2078C
[2SK2625LS]
10.0 3.2
4.5
2.8
0.9 1.2
1.2
0.75 0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
123
2.55 2.55
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Ratings
600
±30
4
16
2.0
30
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K2625
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
Conditions
ID=1mA, VGS=0
VDS=600V, VGS=0
VGS=±30V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=2.5A
ID=2.5A, VGS=15V
min
600
3.5
1.5
Ratings
typ
max
Unit
V
1.0 mA
±100
nA
5.5 V
3.0 S
1.5 2.0
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2501 TS IM TA-3475 No.7081-1/4









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2SK2625LS Даташит, Описание, Даташиты
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Switching Time Test Circuit
2SK2625LS
Symbol
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=200V, ID=5A, VGS=10V
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IS=5A, VGS=0
PW=1µs
D.C.0.5%
VDD=200V
ID=2.5A
RL=80.0
VGS=15V D
VOUT
G
P.G
RGS=50
2SK2625LS
S
Ratings
min typ max
Unit
700 pF
220 pF
110 pF
20 nC
20 ns
20 ns
50 ns
25 ns
0.88 1.2 V
ID -- VDS
6
10V
5
15V 8V
4
3
7V
2
1
VGS=6V
0
0 1 2 3 4 5 6 7 8 9 10
Drain-to-Source Voltage, VDS -- V IT03649
RDS(on) -- VGS
4.0
Tc=25°C
3.5
3.0
ID=1A
2.5
2.0
1.5
5A
2.5A
1.0
4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT03651
ID -- VGS
8
VDS=10V
7 Tc= --25°C
6
25°C
5
75°C
4
3
2
1
0
0 5 10 15 20
Gate-to-Source Voltage, VGS -- V IT03650
RDS(on) -- Tc
3.5
3.0
2.5
2.0
1.5
I D=2.5=A2,.5VAG, VS=G10S=V15V
ID
1.0
0.5
--50
--25
0 25 50 75 100 125 150
Case Temperature, Tc -- °C
IT03652
No.7081-2/4









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2SK2625LS Даташит, Описание, Даташиты
10
7
5
3
2
1.0
7
5
3
2
0.1
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
100
7
5
3
2
10
3
2.5
yfs-- ID
Tc=
--25°C
75°C
25°C
2SK2625LS
VDS=10V
6
5
4
3
VGS(off) -- Tc
VDS=10V
ID=1mA
23
5 7 1.0
23
57
Drain Current, ID -- A
IT03653
IF -- VSD
VGS=0
0.3 0.6 0.9 1.2
Diode Forward Voltage, VSD -- V
SW Time -- ID
1.5
IT03655
td(off)
VDD=200V
VGS=10V
tf
td(on)
tr
5 7 1.0
23
Drain Current, ID -- A
PD -- Ta
5 7 10
IT03657
2
--50 --25
0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IT03654
3 Ciss, Coss, Crss -- VDS
f=1MHz
2
1000
7
5
Ciss
3 Coss
2
Crss
100
7
5
3
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT03656
ASO
3
2 IDP=16A
<1µs
10
7
5
ID=4A
100µs10µs
3
2
1.0
7
5
3
2
Operation in this
area is limited by RDS(on).
DC
1001m0ms 1sms
Operation
0.1
7
5
3
2 Tc=25°C
0.01 Single Pulse
1.0 2 3 5 7 10 2 3 5 7 100 2 3
Drain-to-Source Voltage, VDS -- V
PD -- Tc
35
5 7 1000
IT03658
30
2.0
25
1.5
20
1.0
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03660
15
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT03659
No.7081-3/4










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