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Número de pieza | 2SK2159 | |
Descripción | N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | |
Fabricantes | NEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK2159 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2159
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2159 is an N-channel vertical type MOS FET featur-
ing an operating voltage as low as 1.5 V. Because it can be
driven on a low voltage and it is not necessary to consider
driving current, the 2SK2159 is suitable for driving actuators of
low-voltage portable systems such as headphone stereo sets
and camcorders.
FEATURES
• Capable of drive gate with 1.5 V
• Small RDS(on)
RDS(on) = 0.7 Ω MAX. @VGS = 1.5 V, ID = 0.1 A
RDS(on) = 0.3 Ω MAX. @VGS = 4.0 V, ID = 1.0 A
PACKAGE DIMENSIONS
(in millimeters)
4.5 ± 0.1
1.6 ± 0.2
1.5 ± 0.1
2
13
0.42
± 0.06
0.42 ± 0.06
0.47
1.5 ±0.06
3.0
0.41+–00..0035
EQUIVALENT CIRCUIT
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
3
Gate protection
diode
Internal diode
PIN CONNECTION
1
1. Source (S)
2. Drain (D)
Marking: NW
3. Gate (G)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW ≤ 10 ms,
Duty Cycle ≤ 50 %
Mounted on 16 cm2 × 0.7 mm ceramic substrate.
RATINGS
60
±14
±2.0
±4.0
2.0
150
–55 to +150
UNIT
V
V
A
A
W
˚C
˚C
Document No. D11235EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
© 1996
1 page REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
2SK2159
Document No.
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2SK2159.PDF ] |
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