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PDF 2SK2157 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2157 | |
| Descripción | N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2157
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2157 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V. This product has a low ON resistance and
superb switching characteristics and is ideal for driving the actua-
tors and DC/DC converters.
FEATURES
• New package intermediate between small-signal and power
models
• Can be directly driven by output of 5-V IC
• Low ON resistance
RDS(on) ≤ 0.15 Ω @VGS = 4 V, ID = 2.5 A
RDS(on) ≤ 0.10 Ω @VGS = 10 V, ID = 2.5 A
PACKAGE DIMENSIONS (in mm)
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
S DG
0.5 ±0.1
0.5 ±0.1
2.1 0.85 ±0.1
4.2
0.41 ±0.05
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Internal diode
Gate
protection
diode
Source (S)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: NA4
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW ≤ 10 ms,
Duty cycle ≤ 50 %
7.5 cm2 × 0.7 mm, ceramic substrate used
RATING
30
±20
±5.0
±10.0
2.0
150
–55 to +150
UNIT
V
V
A
A
W
˚C
˚C
Document No. D11233EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
1 page  
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
2SK2157
Document No.
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK2157.PDF ] | |
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