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2SK1278 PDF даташит

Спецификация 2SK1278 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «N-channel MOS-FET».

Детали детали

Номер произв 2SK1278
Описание N-channel MOS-FET
Производители Fuji Electric
логотип Fuji Electric логотип 

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2SK1278 Даташит, Описание, Даташиты
2SK1278
F-V Series
> Features
- Include Fast Recovery Diode
- High Voltage
- Low Driving Power
N-channel MOS-FET
500V 1,1Ω 10A 100W
> Outline Drawing
> Applications
- Motor Control
- Inverters
- Choppers
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
500
Continous Drain Current
I D 10
Pulsed Drain Current
I D(puls)
40
Continous Reverse Drain Current
I DR
10
Gate-Source-Voltage
V GS
±20
Max. Power Dissipation
P D 100
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
A
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=10mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=500V Tch=25°C
VGS=0V
Gate Source Leakage Current
I GSS
VGS=±20V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=5A
VGS=10V
Forward Transconductance
g fs ID=5A VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
t r ID=10A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
t f RGS=25
Diode Forward On-Voltage
V SD
IF=IDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
Min.
500
2,1
Typ. Max.
3,0 4,0
10 500
Unit
V
V
µA
10 100 nA
0,8 1,1
48
S
1100 1600 pF
140 210 pF
75 110 pF
25 40 ns
60 90 ns
200 300 ns
90 140 ns
0,95 1,8 V
150 200 ns
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
35 °C/W
1,25 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com









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2SK1278 Даташит, Описание, Даташиты
N-channel MOS-FET
500V 1,1Ω 10A 100W
> Characteristics
Typical Output Characteristics
2SK1278
F-V Series
Drain-Source-On-State Resistance vs. Tch
Typical Transfer Characteristics
1
2
3
VDS [V]
Typical Drain-Source-On-State-Resistance vs. ID
Tch [°C]
Typical Forward Transconductance vs. ID
VGS [V]
Gate Threshold Voltage vs. Tch
44
5
6
ID [A]
Typical Capacitance vs. VDS
ID [A]
Typical Input Charge
Tch [°C]
Forward Characteristics of Reverse Diode
7
8
↑↑
9
VDS [V]
Safe operation area
10
Qg [nC]
VSD [V]
Transient Thermal impedance
11
VDS [V]
This specification is subject to change without notice!
t [s]










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