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100307F PDF даташит

Спецификация 100307F изготовлена ​​​​«National Semiconductor» и имеет функцию, называемую «Low Power Quint Exclusive OR/NOR Gate».

Детали детали

Номер произв 100307F
Описание Low Power Quint Exclusive OR/NOR Gate
Производители National Semiconductor
логотип National Semiconductor логотип 

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100307F Даташит, Описание, Даташиты
August 1998
100307
Low Power Quint Exclusive OR/NOR Gate
General Description
The 100307 is monolithic quint exclusive-OR/NOR gate. The
Function output is the wire-OR of all five exclusive-OR out-
puts. All inputs have 50 kpull-down resistors.
Features
n Low Power Operation
n 2000V ESD protection
n Pin/function compatible with 100107
n Voltage compensated operating range = −4.2V to −5.7V
n Available to industrial grade temperature range
n Available to Standard Microcircuit Drawing
(SMD) 5962-9459001
Logic Symbol
Logic Equation
F = (D1a % D2a) + (D 1b % D2b) + (D1c % D2c) + (D1d % D2d)
+ (D1e % D 2e).
Pin Names
Dna– Dne
F
Description
Data Inputs
Function Output
Oa– Oe
Oa– Oe
Data Outputs
Complementary
Data Outputs
DS100305-1
© 1998 National Semiconductor Corporation DS100305
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100307F Даташит, Описание, Даташиты
Connection Diagrams
24-Pin DIP
24-Pin Quad Cerpak
DS100305-2
DS100305-3
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100307F Даташит, Описание, Даташиты
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Above which the useful life may be impaired. (Note 1)
Storage Temperature (TSTG)
Maximum Junction Temperature (TJ)
Ceramic
−65˚C to +150˚C
+175˚C
Plastic
+150˚C
VEE Pin Potential to Ground Pin
Input Voltage (DC)
Output Current (DC Output HIGH)
−7.0V to +0.5V
VEE to +0.5V
−50 mA
ESD (Note 2)
2000V
Recommended Operating
Conditions
Case Temperature (TC)
Military
−55˚C to +125˚C
Supply Voltage (VEE)
−5.7V to −4.2V
Note 1: Absolute maximum ratings are those values beyond which the de-
vice may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.
Military Version
DC Electrical Characteristics
VEE = −4.2V to −5.7V, VCC = VCCA = GND, TC = −55˚C to +125˚C
Symbol
Parameter
VOH Output HIGH Voltage
Min
−1025
Max
−870
Units
mV
TC
0˚C to
+125˚C
−1085 −870 mV
−55˚C
VOL
Output LOW Voltage −1830 −1620 mV
0˚C to
+125˚C
−1830 −1555 mV
−55˚C
VOHC Output HIGH Voltage −1035
mV 0˚C to
+125˚C
−1085
mV −55˚C
VOLC
Output LOW Voltage
−1610 mV
0˚C to
+125˚C
−1555 mV
−55˚C
VIH
Input HIGH Voltage −1165 −870 mV
−55˚C
+125˚C
VIL
Input LOW Voltage
−1830 −1475 mV −55˚C to
+125˚C
IIL
Input LOW Current
0.50
µA −55˚C to
+125˚C
IIH Input High Current
D2a– D2e
250 µA
0˚C to
D1a– D1e
350 +125˚C
D2a– D2e
350 µA
−55˚C
D1a– D1e
500
IEE Power Supply Current −75 −25 mA −55˚C to
+125˚C
Conditions
VIN = VIH (Max)
or VIL (Min)
Loading with
50to −2.0V
VIN = VIH (Min)
or VIL (Max)
Loading with
500 to −2.0V
Guaranteed HIGH Signal
for All Inputs
Guaranteed LOW Signal
for All Inputs
VEE = −4.2V
VIN = VIL (Min)
VEE = −5.7V
VIN = VIH (Max)
Inputs Open
Notes
1, 2, 3
1, 2, 3
1, 2, 3, 4
1, 2, 3,4
1, 2, 3
1, 2, 3
1, 2, 3
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2 3, 7, and 8.
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.
Note 6: Guaranteed by applying specified input condition and testing VOH/VOL.
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