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100304F PDF даташит

Спецификация 100304F изготовлена ​​​​«National Semiconductor» и имеет функцию, называемую «Low Power Quint AND/NAND Gate».

Детали детали

Номер произв 100304F
Описание Low Power Quint AND/NAND Gate
Производители National Semiconductor
логотип National Semiconductor логотип 

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100304F Даташит, Описание, Даташиты
August 1998
100304
Low Power Quint AND/NAND Gate
General Description
The 100304 is monolithic quint AND/NAND gate. The Func-
tion output is the wire-NOR of all five AND gate outputs. All
inputs have 50 kpull-down resistors.
Features
n Low Power Operation
n 2000V ESD protection
n Pin/function compatible with 100104
n Voltage compensated operating range = −4.2V to −5.7V
n Available to industrial grade temperature range
n Available to Standard Microcircuit Drawing
(SMD) 5962-9153701
Logic Symbol
DS100304-1
Logic Equation
F = (D1a D2a) + (D1b D2b) + D1c D2c) + (D1d D2d) + (D1e D2e).
Pin Names
Dna– Dne
F
Oa– Oe
Oa– Oe
Description
Data Inputs
Function Output
Data Outputs
Complementary Data Outputs
© 1998 National Semiconductor Corporation DS100304
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100304F Даташит, Описание, Даташиты
Connection Diagrams
24-Pin DIP
DS100304-2
24-Pin Quad Cerpak
DS100304-3
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100304F Даташит, Описание, Даташиты
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Above which the useful life may be impaired
Storage Temperature (TSTG)
Maximum Junction Temperature (TJ)
Ceramic
−65˚C to +150˚C
+175˚C
VEE Pin Potential to Ground Pin
Input Voltage (DC)
Output Current (DC Output HIGH)
−7.0V to +0.5V
VEE to +0.5V
−50 mA
ESD (Note 2)
2000V
Recommended Operating
Conditions
Case Temperature (TC)
Military
−55˚C to +125˚C
Supply Voltage (VEE)
−5.7V to −4.2V
Note 1: Absolute maximum ratings are those values beyond which the de-
vice may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.
Military Version
DC Electrical Characteristics
VEE = −4.2V to −5.7V, VCC = VCCA = GND, TC = −55˚C to +125˚C
Symbol
Parameter
Min Max Units
VOH Output HIGH Voltage −1025 −870 mV
TC
0˚C to
+125˚C
−1085 −870 mV −55˚C
VOL Output LOW Voltage −1830 −1620 mV 0˚C to
+125˚C
−1830 −1555 mV −55˚C
VOHC Output HIGH Voltage −1035
mV 0˚C to
+125˚C
−1085
mV −55˚C
VOLC Output LOW Voltage
−1610 mV
0˚C to
+125˚C
−1555 mV −55˚C
VIH Input HIGH Voltage −1165 −870 mV −55˚C
+125˚C
VIL Input LOW Voltage −1830 −1475 mV −55˚C to
+125˚C
IIL
Input LOW Current
0.50
µA −55˚C to
+125˚C
Input High Current
D2a– D2e
250 µA
0˚C to
D1a– D1e
350 +125˚C
IIH
D2a– D2e
350 µA
−55˚C
D1a– D1e
500
IEE Power Supply Current −75 −25 mA −55˚C to
+125˚C
Conditions
VIN = VIH (Max)
or VIL (Min)
Loading with
500 to −2.0V
VIN = VIH (Min)
or VIL (Max)
Loading with
50to −2.0V
Guaranteed HIGH Signal
for All Inputs
Guaranteed LOW Signal
for All Inputs
VEE = −4.2V
VIN = VIL (Min)
VEE = −5.7V
VIN = VIH (Max)
Inputs Open
Notes
(Notes 3, 4, 5)
(Notes 3, 4, 5)
(Notes 3, 4, 5, 6)
(Notes 3, 4, 5, 6)
(Notes 3, 4, 5)
(Notes 3, 4, 5)
(Notes 3, 4, 5)
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups, 1, 2 3, 7, and 8.
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.
Note 6: Guaranteed by applying specified input condition and testing VOH/VOL.
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