AO4406 PDF даташит
Спецификация AO4406 изготовлена «Alpha Industries» и имеет функцию, называемую «N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR». |
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Детали детали
Номер произв | AO4406 |
Описание | N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Производители | Alpha Industries |
логотип |
7 Pages
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March 2002
AO4406
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device makes an excellent high side switch for
notebook CPU core DC-DC conversion.
Features
VDS (V) = 30V
ID = 11.5A
RDS(ON) < 14mΩ (VGS = 10V)
RDS(ON) < 16.5mΩ (VGS = 4.5V)
RDS(ON) < 26mΩ (VGS = 2.5V)
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Avalanche Current B,E
Repetitive Avalanche Energy B,E L=0.1mH
ID
IDM
IAV
EAV
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
11.5
9.6
80
25
78
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
23
48
12
Max
40
65
16
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
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AO4406
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=12A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=10A
VGS=2.5V, ID=8A
Forward Transconductance
VDS=5V, ID=10A
Diode Forward Voltage
IS=10A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=11.5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.2Ω,
tD(off)
Turn-Off DelayTime
RGEN=3Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
Min
30
0.8
60
25
Typ
1
11.5
16
13.5
19.5
38
0.83
1630
201
142
0.8
18
2.5
5.5
4
5
32
5
18,7
19.8
Max
1
5
100
1.5
14
19.2
16.5
26
1
4.5
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
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AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
10V
40
4.5V
3V
2.5V
30
20
10
0
0
2V
VGS=1.5V
1234
VDS (Volts)
Fig 1: On-Region Characteristics
5
30
25
VGS=2.5V
20
15 VGS=4.5V
10 VGS=10V
5
0
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
40
ID=10A
30
125°C
20
25°C
10
30
25
20
15
10
5
0
0
1.8
1.6
1.4
1.2
VDS=5V
125°C
25°C
0.5 1 1.5 2 2.5
VGS(Volts)
Figure 2: Transfer Characteristics
3
ID=10A VGS=10V
VGS=4.5V
VGS=2.5V
1
0.8
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
1.0E+01
1.0E+00
1.0E-01
VGS=0V
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
0
0.00
2.00
4.00 6.00
VGS (Volts)
8.00 10.00
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2 0.4 VSD 0(V.6olts) 0.8 1.0
Figure 6: Body-Diode Characteristics
1.2
Alpha and Omega Semiconductor, Ltd.
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