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AO3407 PDF даташит

Спецификация AO3407 изготовлена ​​​​«ETC» и имеет функцию, называемую «P-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв AO3407
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители ETC
логотип ETC логотип 

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AO3407 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3407
AO3407
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3407 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3407 is Pb-free
(meets ROHS & Sony 259 specifications). AO3407
is a Green Product ordering option.
Features
VDS (V) = -30V
ID = -4.1 A (VGS = -10V)
RDS(ON) < 60m(VGS = -10V)
RDS(ON) < 90m(VGS = -4.5V)
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-4.1
-3.5
-20
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W









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AO3407 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3407
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-4.1A
VGS=-4.5V, ID=-3A
Forward Transconductance
VDS=-5V, ID=-4A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge (10V)
Qg Total Gate Charge (4.5V)
Qgs Gate Source Charge
VGS=-4.5V, VDS=-15V, ID=-4A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=3.6,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
Min
-30
-1
-10
5.5
Typ Max Units
-1
-5
±100
-1.8 -3
60
8.2
-0.77
90
-1
-2.2
V
µA
nA
V
A
m
m
S
V
A
700 840
120
75
10 15
pF
pF
pF
14.3 18
7
3.1
3
8.6
5
28.2
13.5
27 36
15
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC









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AO3407 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
-10V -5V
15
10
-4.5V
-4V
-3.5V
10
8
6
4
5
VGS=-3V
2
0
0.00
1.00
2.00
3.00
4.00
-VDS (Volts)
Figure 1: On-Region Characteristics
5.00
100
0
0
1.6
80
VGS=-4.5V
1.4
60 1.2
VGS=-10V
40 1
VDS=-5V
125°C
25°C
123
-VGS(Volts)
Figure 2: Transfer Characteristics
4
VGS=-4.5V
VGS=-10V
ID=-2A
20
0 2 4 6 8 10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
160
140 ID=-2A
120
100
80 125°C
60
40 25°C
20
2 4 6 8 10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.8
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
0.0
125°C
25°C
0.2 0.4 0.6 0.8 1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2










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