BAV23 Datasheet PDF - NXP Semiconductors
| Part Number | BAV23 | |
| Description | Dual high-voltage switching diodes | |
| Manufacturers | NXP Semiconductors | |
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BAV23 series
Dual high-voltage switching diodes
Rev. 07 — 19 March 2010
Product data sheet
1. Product profile
1.1 General description
Dual high-voltage switching diodes, encapsulated in small Surface-Mounted
Device (SMD) plastic packages.
Table 1. Product overview
Type number
Package
NXP
BAV23A
SOT23
BAV23C
SOT23
BAV23S
SOT23
BAV23
SOT143B
JEDEC
TO-236AB
TO-236AB
TO-236AB
-
Configuration
dual common anode
dual common cathode
dual series
dual isolated
1.2 Features and benefits
High switching speed: trr 50 ns
Low leakage current
Repetitive peak reverse voltage:
VRRM 250 V
Low capacitance: Cd 2 pF
Small SMD plastic package
1.3 Applications
High-speed switching at high voltage
High-voltage general-purpose switching
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
VR = 200 V
Min Typ
-
-
[1] -
-
-
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
Max
100
200
50
Unit
nA
V
ns
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NXP Semiconductors
BAV23 series
Dual high-voltage switching diodes
600
IF
(mA)
400
006aab212
102
IFSM
(A)
10
mbg703
200 (2)
(1) (3)
(4)
1
0
0 0.4 0.8 1.2 1.6
VF (V)
(1) Tamb = 150 C
(2) Tamb = 85 C
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 1. Forward current as a function of forward
voltage; typical values
10−1
1
10 102 103 104
tp (μs)
Based on square wave currents.
Tj = 25 C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
102
IR
(μA)
10
1
(1)
(2)
006aab213
10−1
10−2
(3)
10−3
10−4
(4)
10−5
0
50 100 150 200 250
VR (V)
(1) Tamb = 150 C
(2) Tamb = 85 C
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 3. Reverse current as a function of reverse voltage; typical values
BAV23_SER_7
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
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