BAS70W PDF даташит
Спецификация BAS70W изготовлена «STMicroelectronics» и имеет функцию, называемую «SMALL SIGNAL SCHOTTKY DIODE». |
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Детали детали
Номер произв | BAS70W |
Описание | SMALL SIGNAL SCHOTTKY DIODE |
Производители | STMicroelectronics |
логотип |
5 Pages
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BAS70J / BAS70W
® BAS70-04W /BAS70-05W / BAS70-06W
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
n VERY SMALL CONDUCTION LOSSES
n NEGLIGIBLE SWITCHING LOSSES
n LOW FORWARD VOLTAGE DROP
n SURFACE MOUNT DEVICE
DESCRIPTION
Schottky barrier diodes encapsulated either in
SOT-323 or SOD-323 small SMD packages.
Single and double diodes with different pining are
available.
NC
KK
NC
AA
BAS70W
K2
A
K2 A
K1
K1
BAS70-06W
A2
K
A2 K
A1
A1
BAS70-05W
K2
A2
K1 A2
K2 K1
A1 A1
BAS70-04W
SOT-323
A 76 K
BAS70J
SOD-323
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
VRRM
IF
IFSM
Repetitive peak reverse voltage
Continuous forward current
Surge non repetitive forward current
tp = 10 ms
Ptot Power dissipation (note 1)
Tamb = 25°C
SOD-323
SOT-323
Tstg Maximum storage temperature range
Tj Maximum operating junction temperature *
TL Maximum temperature for soldering during 10s
Note 1: for double diodes, Ptot is the total dissipation of both diodes.
Value
70
70
1
230
- 65 to +150
150
260
Unit
V
mA
A
mW
°C
°C
°C
* : dPtot <
1 thermal runaway condition for a diode on its own heatsink
dTj Rth( j − a)
May 2000 - Ed: 4B
1/5
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BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W
THERMAL RESISTANCE
Symbol
Parameters
Rth (j-a) Junction to ambient (*)
(*) Mounted on epoxy board, with recommended pad layout.
SOD-323
SOT-323
Value
550
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Test Conditions
VBR Tj = 25°C
IR = 10µA
VF * Tj = 25°C
IF = 1mA
IR ** Tj = 25°C
VR = 50V
Pulse test: * tp = 380µs, δ < 2%
** tp = 5 ms, δ < 2%
Min. Typ. Max. Unit
70 V
410 mV
100 nA
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
C Tj = 25°C
F = 1MHz
VR = 0V
τ* Tj = 25°C
IF = 5mA
Krakauer Method
* Effective carrier life time.
Min.
Typ.
Max.
2
Unit
pF
100 ps
2/5
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BAS70-05W / BAS70-06W
Fig. 1: Forward voltage drop versus forward
current.
BAS70J / BAS70W / BAS70-04W /
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
IFM(A)
7E-2
Tj=100°C
Typical values
1E-2
1E-3
Tj=25°C
Maximum values
Tj=25°C
Typical values
VFM(V)
1E-4
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
IR(µA)
1E+1
1E+0
Tj=100°C
1E-1
Tj=25°C
1E-2
VR(V)
1E-3
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
Fig. 3: Reverse leakage current versus junction
temperature (typical values).
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values).
IR(µA)
5E+2
1E+2
VR=70V
1E+1
1E+0
1E-1
1E-2
0
25
Tj(°C)
50 75 100 125 150
C(pF)
2.0
1.0
0.1
1
F=1MHz
Tj=25°C
VR(V)
10
100
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
FR4 with recommended pad layout,
S(Cu)=35µm).
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35µm).
Zth(j-a)/Rth(j-a)
1.00
δ = 0.5
0.10
δ = 0.2
δ = 0.1
Single pulse
0.01
1E-3
1E-2
tp(s)
1E-1 1E+0
T
δ=tp/T
1E+1
tp
1E+2
Rth(j-a) (°C/W)
600
550
P=0.2W
500
450
400
350
300
0
S(Cu) (mm )
5 10 15 20 25 30 35 40 45 50
3/5
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