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AT-31011 PDF даташит

Спецификация AT-31011 изготовлена ​​​​«Agilent(Hewlett-Packard)» и имеет функцию, называемую «Low Current/ High Performance NPN Silicon Bipolar Transistor».

Детали детали

Номер произв AT-31011
Описание Low Current/ High Performance NPN Silicon Bipolar Transistor
Производители Agilent(Hewlett-Packard)
логотип Agilent(Hewlett-Packard) логотип 

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AT-31011 Даташит, Описание, Даташиты
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-31011
AT-31033
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
AT-31011:0.9 dB NF,13 dB GA
AT-31033:0.9 dB NF,11 dB GA
• Characterized for End-Of-
Life Battery Use (2.7 V)
• SOT-143 SMT Plastic
Package
• Tape-And-Reel Packaging
Option Available[1]
Outline Drawing
EMITTER COLLECTOR
310
BASE EMITTER
SOT-143 (AT-31011)
COLLECTOR
310
BASE EMITTER
SOT-23 (AT-31033)
Note:
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”
Description
Hewlett-Packard’s AT-31011 and
AT-31033 are high performance
NPN bipolar transistors that have
been optimized for operation at
low voltages, making them ideal
for use in battery powered
applications in wireless markets.
The AT-31033 uses the 3 lead
SOT-23, while the AT-31011 places
the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standards
compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a mul-
tiplicity of tasks. The 10 emitter
finger interdigitated geometry
yields an extremely fast transistor
with low operating currents and
reasonable impedances.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.9 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Applications
include cellular and PCS handsets
as well as Industrial-Scientific-
Medical systems. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 11 dB or more
associated gain at a 2.7 V, 1 mA
bias. Moderate output power
capability (+9 dBm P1dB) coupled
with an excellent noise figure
yields high dynamic range for a
microcurrent device. High gain
capability at 1 V, 1 mA makes these
devices a good fit for 900 MHz
pager applications.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett-Packard’s
10 GHz fT, 30 GHz fmax Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
4-33
5965-8919E









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AT-31011 Даташит, Описание, Даташиты
AT-31011, AT-31033 Absolute Maximum Ratings
Symbol
Parameter
Units Absolute Maximum[1]
VEBO Emitter-Base Voltage
V
1.5
VCBO Collector-Base Voltage
V
11
VCEO Collector-Emitter Voltage V
5.5
IC Collector Current
mA
16
PT Power Dissipation[2,3]
mW
150
Tj Junction Temperature
°C
150
TSTG Storage Temperature
°C
-65 to 150
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/°C for TC > 67.5°C.
Thermal Resistance[2]:
θjc = 550°C/W
Electrical Specifications, TA = 25°C
AT-31011
Symbol
Parameters and Test Conditions
Units Min Typ Max
NF Noise Figure
VCE = 2.7 V, IC = 1 mA
GA Associated Gain
VCE = 2.7 V, IC = 1 mA
hFE Forward Current
Transfer Ratio
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
f = 0.9 GHz dB
0.9[1] 1.2[1]
f = 0.9 GHz dB 11[1] 13[1]
VCE = 2.7 V
IC = 1 mA
VCB = 3 V
VEB = 1 V
-
µA
µA
70 300
0.05 0.2
0.1 1.5
Notes:
1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
AT-31033
Min Typ Max
0.9[2] 1.2[2]
9[2] 11[2]
70 300
0.05 0.2
0.1 1.5
VBB
1000 pF
W = 10 L = 1860
W = 10 L = 1000
W = 30 L = 100
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
DIMENSIONS IN MILS
VCC
W = 10 L = 1860
25
1000 pF
W = 30 L = 100
W = 10 L = 1025
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
NOT TO SCALE
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a
Compromise Match Between Best Noise Figure, Best Gain, Stability, a Practical,
Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and AT-310
Geometries.
4-34









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AT-31011 Даташит, Описание, Даташиты
Characterization Information, TA = 25° C
Symbol
Parameters and Test Conditions
P1dB
G1dB
IP3
|S21|E2
CCB
Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 10 mA
f = 0.9 GHz
Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 10 mA
f = 0.9 GHz
Output Third Order Intercept Point,
VCE = 2.7 V, IC = 10 mA (opt tuning)
f = 0.9 GHz
Gain in 50 System; VCE = 2.7 V, IC = 1 mA
f = 0.9 GHz
Collector-Base Capacitance
VCB = 3V, f = 1 MHz
Units
dBm
dB
dBm
dB
pF
AT-31011 AT-31033
Typ Typ
99
15 13
20 20
10 9
0.04 0.04
2.5
AMPLIFIER NF
2
1.5
NF MIN.
1
0.5
1 mA
10 mA
0
0 0.5 1 1.5 2
FREQUENCY (GHz)
2.5
Figure 2. AT-31011 and AT-31033
Minimum Noise Figure and Amplifier
NF[1] vs. Frequency and Current at
VCE␣ =2.7 V.
25
20
10 mA
15
1 mA
10
5
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 3. AT-31011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE␣ = 2.7 V.
25
20
10 mA
15
10
1 mA
5
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 4. AT-31033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE␣ = 2.7 V.
10
10 mA
8
5 mA
6
4
2 mA
2 2 mA
5 mA
10 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
20
16
12
8
2 mA
4 5 mA
10 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
16
12
8
4
2 mA
5 mA
10 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 5. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE␣ = 2.7 V.
Figure 6. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣ =2.7 V.
Figure 7. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣ =2.7 V.
Note:
1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and
including circuit losses.
4-35










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