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AT-30511 PDF даташит

Спецификация AT-30511 изготовлена ​​​​«Agilent(Hewlett-Packard)» и имеет функцию, называемую «Low Current/ High Performance NPN Silicon Bipolar Transistor».

Детали детали

Номер произв AT-30511
Описание Low Current/ High Performance NPN Silicon Bipolar Transistor
Производители Agilent(Hewlett-Packard)
логотип Agilent(Hewlett-Packard) логотип 

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AT-30511 Даташит, Описание, Даташиты
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-30511
AT-30533
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
AT-30511:1.1dB NF, 16 dB GA
AT-30533:1.1dB NF, 13 dB GA
• Characterized for End-Of-
Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-And-Reel Packaging
Option Available[1]
Outline Drawing
EMITTER COLLECTOR
305
BASE EMITTER
SOT-143 (AT-30511)
COLLECTOR
305
BASE EMITTER
SOT-23 (AT-30533)
Note:
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”.
Description
Hewlett-Packard’s AT-30511 and
AT-30533 are high performance
NPN bipolar transistors that have
been optimized for maximum fT at
low voltage operation, making
them ideal for use in battery
powered applications in wireless
markets. The AT-30533 uses the 3
lead SOT-23, while the AT-30511
places the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a multi-
plicity of tasks. The 5 emitter
finger interdigitated geometry
yields an extremely fast transistor
with high gain and low operating
currents.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 13 dB or more
associated gain at a 2.7 V, 1 mA
bias. Voltage breakdowns are high
enough for use at 5 volts. High
gain capability at 1 V, 1 mA makes
these devices a good fit for
900␣ MHz pager applications.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett- Packard’s
10␣ GHz f T, 30 GHz fMAX Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
4-23
5965-8918E









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AT-30511 Даташит, Описание, Даташиты
AT-30511, AT-30533 Absolute Maximum Ratings
Symbol
Parameter
Units Absolute Maximum[1]
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation[2] [3]
Junction Temperature
Storage Temperature
V
V
V
mA
mW
°C
°C
1.5
11
5.5
8
100
150
-65 to 150
Notes:
1. Operation of this device above any one of these parameters may cause permanent
damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/°C for TC > 95°C.
Thermal Resistance[2]:
θjc = 550°C/W
Electrical Specifications, TA = 25°C
AT-30511
Symbol
Parameters and Test Conditions
Units Min Typ Max
NF Noise Figure
VCE = 2.7 V, IC = 1 mA
GA Associated Gain
VCE = 2.7 V, IC = 1 mA
hFE Forward Current
Transfer Ratio
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
f = 0.9 GHz dB
1.1[1] 1.4[1]
f = 0.9 GHz dB 14[1] 16[1]
VCE = 2.7 V
IC = 1 mA
VCB = 3 V
VEB = 1 V
-
µA
µA
70 300
0.03 0.2
0.1 1.5
Notes:
1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
AT-30533
Min Typ Max
1.1[2] 1.4[2]
11[2]
70
13[2]
300
0.03 0.2
0.1 1.5
VBB
W = 10 L = 1860
1000 pF
W = 10 L = 1000
W = 30 L = 100
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
DIMENSIONS IN MILS
VCC
W = 10 L = 1860
25
1000 pF
W = 30 L = 100
W = 10 L = 1025
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
NOT TO SCALE
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a
Compromise Match Between Best Noise Figure, Best Gain, Stability, a Practical,
Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and
AT-310 Geometries.
4-24









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AT-30511 Даташит, Описание, Даташиты
AT-30511, AT-30533 Characterization Information, TA = 25°C
Symbol
Parameters and Test Conditions
Units
P1dB
G1dB
IP3
|S21|E2
CCB
Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 5 mA
f = 0.9 GHz
Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 5 mA
f = 0.9 GHz
Output Third Order Intercept Point,
VCE = 2.7 V, IC = 5 mA (opt tuning)
f = 0.9 GHz
Gain in 50 System; VCE = 2.7 V, IC = 1 mA
f = 0.9 GHz
Collector-Base Capacitance
VCB = 3V, f = 1 MHz
dBm
dB
dBm
dB
pF
AT-30511 AT-30533
Typ Typ
77
16.5 15
17 17
10 9
0.04 0.04
Typical Performance
2.5
25
25
2.0
AMPLIFIER NF
1.5
20
5 mA
15
20
5 mA
15
1.0 NF MIN.
0.5
0
0
1 mA
5 mA
0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 2. AT-30511 and AT-30533
Minimum Noise Figure and Amplifier
NF[1] vs. Frequency and Current at
VCE␣ =2 .7 V.
10
10
1 mA
5
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 3. AT-30511 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE␣ = 2 .7 V.
25
10
1 mA
5
0
0 0.5 1.0 1.5 2
FREQUENCY (GHz)
2.5
Figure 4. AT-30533 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE␣ = 2 .7 V.
25
8
5 mA
6
4
2 mA
2
20
5 mA
15
2 mA
10
5
20
5 mA
15
10 2 mA
5
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 5. AT-30511 and AT-30533
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE␣ = 2.7 V.
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 6. AT-30511 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣ =2.7 V.
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 7. AT-30533 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣ =2.7 V.
Note:
1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and
including circuit losses.
4-25










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