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CS8128YDR8 PDF даташит

Спецификация CS8128YDR8 изготовлена ​​​​«Cherry Semiconductor Corporation» и имеет функцию, называемую «5V Linear Controller/Driver».

Детали детали

Номер произв CS8128YDR8
Описание 5V Linear Controller/Driver
Производители Cherry Semiconductor Corporation
логотип Cherry Semiconductor Corporation логотип 

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CS8128YDR8 Даташит, Описание, Даташиты
CS8128
5V Linear Controller/Driver
Description
Features
The CS8128 contains all the necessary
control circuitry to implement a 5V lin-
ear regulator. An external pass device is
used to produce superior performance
compared to conventional monolithic
regulators. The CS8128 with a TIP42
PNP transistor typically provides a
100mV dropout voltage at 500mA,
increasing to 350mV at 3A. Quiescent
current at 500mA is only 5mA.
Monolithic regulators cannot approach
these figures because their power tran-
sistors do not provide the high beta and
excellent saturation characteristics at
high currents. The CS8128 is compatible
with a wide variety of external transis-
tors, allowing flexibility for thermal,
space, and cost management.
The CS8128 includes thermal shutdown
and externally programmable current
limit and over-voltage shutdown, mak-
ing it suitable for use in automotive and
switching regulator post regulator appli-
cations. An optional external RC filter
added to the CS8128 supply lead pro-
vides EMC hardening in addition to the
on-chip EMC hardening. The SENSE
lead allows remote sensing of the output
voltage for improved regulation.
An active microprocessor RESET func-
tion is included on-chip with externally
programmable delay time. During
power-up, or after detection of any error
in the regulated output, the RESET lead
will remain in the low state for the dura-
tion of the delay. Types of errors include
short circuit, low input voltage, over-
voltage shutdown, thermal shutdown,
or others that cause the output to
become unregulated. This function is
independent of the input voltage and
will function correctly with an output
voltage as low as 1V. Hysteresis is
included in both the reset and delay
comparators for noise immunity and to
prevent oscillations. A latching dis-
charge circuit is used to discharge the
delay capacitor, even when triggered by
a relatively short fault condition. This
circuit improves upon the commonly
used SCR structure by providing
improved noise immunity and full
capacitor discharge (0.2V typ).
Block Diagram
Pwr Gnd
Ref Gnd
VIN
Delay
IC
Power
Gnd
IC
Reference
Gnd
PRE-
REGULATOR
Regulated Supply
for Circuit Bias
10µA
Delay
Current
Latching
Discharge
QS
R
-
+
Vdis
Over
Voltage
Shutdown
Thermal
Shutdown
Bandgap
Reference 1.25V
Error
Amp
-
+
-
Reset
Comparator
Delay
- Comparator
+
SHUTDOWN
VOUT
Sense
RESET
s Externally Set Delay for
Reset
s 60V Load Dump
Protection
s Internal Thermal
Overload Protection
s 3% Output Accuracy
s Active RESET
s Noise Immunity
s On Chip EMC Hardening
Protection Incorporated
s Externally Set Current
Limit
s Externally Set
Overvoltage Shutdown
Package Options
8L SO & 8L PDIP
VIN 1
Sense 2
Delay 3
RESET 4
8 VOUT
7 Pwr Gnd
6 SHUTDOWN
5 Ref Gnd
Rev. 2/5/99
Cherry Semiconductor Corporation
2000 South County Trail, East Greenwich, RI 02818
Tel: (401)885-3600 Fax: (401)885-5786
Web Site: www.cherry-semi.com
1 A ® Company









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CS8128YDR8 Даташит, Описание, Даташиты
Absolute Maximum Ratings
Power Dissipation.............................................................................................................................................Internally Limited
Input Voltage ..................................................................................................................................................................–0.3V, 26V
Transient Input Voltage ............................................................................................................................................................60V
Output Current ...............................................................................................................................................Externally Limited
ESD Susceptibility (Human Body Model)..............................................................................................................................2kV
Junction Temperature ............................................................................................................................................–45°C to 150°C
Storage Temperature..............................................................................................................................................–55°C to 150°C
Lead Temperature Soldering
Wave Solder (through hole styles only) .....................................................................................10 sec. max, 260°C peak
Reflow (SMD styles only) ......................................................................................60 sec. max above 183°C, 230°C peak
Electrical Characteristics: TA = -40˚C to +125˚C, TJ = -40˚C to +150˚C, VIN = 6 to 26V, IOUT = 5 to 500mA, Per Test Circuit
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
s Output Stage (VOUT)
Output Voltage
Dropout Voltage
Supply Current IQ
Line Regulation
Load Regulation
Ripple Rejection
VIN Overvoltage Shutdown
Drive Current
IOUT = 500mA, note 1
IOUT 10mA
IOUT 500mA
IOUT 3A, note 1
6V VIN 26V, IOUT = 5mA
5V IOUT 500mA, VIN = 14V
f = 120Hz, 7V VIN 17V,
IOUT = 350mA
VSENSE = 0V
4.85 5.00
0.1
4
5
30
12
2
60 70
32
25 250
5.15 V
0.6 V
8 mA
15
50 mV
50 mV
dB
40 V
mA
s RESET and Delay Functions
Delay Charge Current, ICharge
RESET Threshold VRTH
VRTL
RESET Hysteresis VRH
Delay Threshold VDTC
VDTD
Delay Hysteresis, VDH
RESET Output Voltage Low
RESET Output
Leakage Current
Delay Capacitor (Vdis)
Discharge Voltage
Delay Time
VDelay = 2V
VOUT Increasing
VOUT Decreasing
Charge
Discharge
VDTC - VDTD
1V < VOUT < VRTL, 3kto VOUT
VD > VDTC , VOUT > VRTH
Discharge Latched "ON",
VOUT > VRTH
CDelay = 0.1µF, note 2
5
4.65
4.50
150
3.25
2.80
200
16
10 15 µA
4.90
VOUT-0.10
V
4.70
VOUT-0.15
V
200 250 mV
3.50 3.75 V
3.00 3.40 V
400 800 mV
0.4 V
10 µA
0.2 0.5 V
32 48 ms
Note 1: Dependent on characteristics of external transistor.
Note 2: Delay Time =
CDelay x VDTC
ICharge
= CDelay x 3.5 x 10 5 (Typical)
2









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CS8128YDR8 Даташит, Описание, Даташиты
PACKAGE LEAD #
8L SO & PDIP
1
2
3
4
5
6
7
8
Package Lead Description
LEAD SYMBOL
FUNCTION
VIN
Sense
Delay
RESET
Ref Gnd
SHUTDOWN
Pwr Gnd
VOUT
Unregulated supply voltage to the IC.
Kelvin connection which allows remote sensing of output volt-
age for improved regulation.
Timing CAP for RESET function
CMOS/TTL compatible open collector output. RESET goes low
whenever VOUT drops below 6% of it's typical value.
Ground connection
Overvoltage shutdown control input.
Ground connection
Supplies base current to PNP pass transistor or threshold volt-
age to FET pass transistor.
Typical Performance Characteristics (per Test Circuit)
Temperature Performance of VOUT
RESET Voltage vs. Output Current
Dropout Voltage vs. IOUT
5.02
5.01
5
IOUT=500mA
5.00V @ 25°C
4.99
4.98
4.97
4.96
4.95
-40 -20 0 20 40 60 80 100120 140150
JUNCTION TEMPERATURE (°C)
VOUT vs. VIN
5.50
5.00
4.50
4.00
3.50
IOUT=0.5A
IOUT= 3A
3.00
2.50
2.00
1.50
1.00
0.50
0.00
0 1 2 3 4 5 6 7 8 9 10
VIN (V)
Line Regulation vs. IOUT
20
25°C
6VVIN - 26V
15
10
5
0 0 0.5 1.0 1.5 2.0 2.5 3.0
IOUT(Amps)
2000
1800
1600
1400
Vin = 5V
1200
1000
800
600
400
200
0
0
5 10 15 20 25 30 35
RESET OUTPUT CURRENT (mA)
40
IQ vs. VIN
100.00
90.00
80.00
70.00
IOUT = 3A
ROUT = 47
60.00
50.00
40.00
30.00
20.00
10.00
IOUT = 0.5A
ROUT = 330
0.00
0 1 2 3 4 5 6 7 8 9 10
VIN (V)
Load Regulation vs. IOUT
20
25°C
18
VIN=14V
16
14
12
10
8
6
4
2
0
0 0.5
1.0 1.5 2.0
IOUT(Amps)
2.5
3.0
400
25°C
350
300
ROUT = 47
250
200
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0
IOUT (Amps)
IQ vs. IOUT
40
25°C
35
30
25
VIN=14V
20
15
10
5
0
0 0.5 1.0 1.5 2.0 2.5
IOUT (Amps)
Ripple Rejection
3.0
80
70
60
50
40
30
20
10
0
10
100
25°C
IOUT=250mA
1K 10K 100K 1M 10M 100M
FREQUENCY (Hz)
3










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Номер в каталогеОписаниеПроизводители
CS8128YDR85V Linear Controller/DriverCherry Semiconductor Corporation
Cherry Semiconductor Corporation

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