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95SQ015 PDF даташит

Спецификация 95SQ015 изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «SCHOTTKY RECTIFIER 9 Amp».

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Номер произв 95SQ015
Описание SCHOTTKY RECTIFIER 9 Amp
Производители International Rectifier
логотип International Rectifier логотип 

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95SQ015 Даташит, Описание, Даташиты
93LCS56/66
2K/4K 2.5V Microwire® Serial EEPROM with Software Write Protect
FEATURES
• Single supply with programming operation down
to 2.5V
• Low power CMOS technology
- 1 mA active current typical
- 5 µA standby current (typical) at 3.0V
• x16 memory organization
- 128x16 (93LCS56)
- 256x16 (93LCS66)
• Software write protection of user defined memory
space
• Self timed erase and write cycles
• Automatic ERAL before WRAL
• Power on/off data protection
• Industry standard 3-wire serial I/O
• Device status signal during E/W
• Sequential READ function
• 1,000,000 E/W cycles guaranteed
• Data retention > 200 years
• 8-pin PDIP/SOIC and 14-pin SOIC packages
• Temperature ranges supported
- Commercial (C):
- Industrial (I):
0˚C to +70˚C
-40˚C to +85˚C
BLOCK DIAGRAM
VCC
V SS
MEMORY
ARRAY
ADDRESS
DECODER
DI
PRE
PE
CS
DATA REGISTER
MODE
DECODE
LOGIC
ADDRESS
COUNTER
OUTPUT
BUFFER
DO
CLOCK
CLK GENERATOR
DESCRIPTION
The Microchip Technology Inc. 93LCS56/66 are low volt-
age Serial Electrically Erasable PROMs with memory
capacities of 2K bits/4K bits respectively. A write protect
register is included in order to provide a user defined
region of write protected memory. All memory locations
greater than or equal to the address placed in the write
protect register will be protected from any attempted write
or erase operation. It is also possible to protect the
address in the write protect register permanently by using
a one time only instruction (PRDS). Any attempt to alter
data in a register whose address is equal to or greater
than the address stored in the protect register will be
aborted. Advanced CMOS technology makes this device
ideal for low power non-volatile memory applications.
PACKAGE TYPES
CS
CLK
DI
DO
DIP
18
27
36
45
93LCS56
93LCS66
VCC
PRE
PE
VSS
CS
CLK
DI
DO
SOIC
18
27
36
45
93LCS56
93LCS66
VCC
PRE
PE
VSS
SOIC
NC 1
CS 2
CLK 3
NC 4
DI 5
DO 6
NC 7
14 NC
13 VCC
12 PRE
11 NC
10 PE
9 VSS
8 NC
93LCS56
93LCS66
Microwire is a registered trademark of National Semiconductor Incorporated.
© 1996 Microchip Technology Inc.
Preliminary
DS11181D-page 1
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95SQ015 Даташит, Описание, Даташиты
93LCS56/66
1.0 ELECTRICAL CHARACTERISTICS
1.1 Maximum Ratings*
VCC...................................................................................7.0V
All inputs and outputs w.r.t. VSS ............... -0.6V to VCC +1.0V
Storage temperature ..................................... -65˚C to +150˚C
Ambient temp. with power applied ................ -65˚C to +125˚C
Soldering temperature of leads (10 seconds) ............. +300˚C
ESD protection on all pins................................................4 kV
*Notice: Stresses above those listed under “Maximum ratings”
may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at those or any
other conditions above those indicated in the operational listings
of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
TABLE 1-1:
Name
CS
CLK
DI
DO
VSS
PE
PRE
VCC
PIN FUNCTION TABLE
Function
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
Program Enable
Protect Register Enable
Power Supply
TABLE 1-2: DC AND AC ELECTRICAL CHARACTERISTICS
VCC = +2.5V to +6.0V
Commercial(C): Tamb = 0˚C to +70˚C
Industrial (I): Tamb = -40˚C to +85˚C
Parameter
Symbol
Min
Max Units
High level input voltage
VIH
2.0 VCC +1
V
Low level input voltage
VIL
-0.3
0.8
V
Low level output voltage VOL1
0.4
V
VOL2
0.2
V
High level output voltage VOH1
2.4
V
VOH2
VCC-0.2
V
Input leakage current
ILI
-10
10
µA
Output leakage current
ILO
-10
10
µA
Pin capacitance
CIN, COUT
7
pF
(all inputs/outputs)
Operating current
ICC Write
3 mA
ICC Read
1 mA
500 µA
Standby current
ICCS
100
µA
30 µA
Clock frequency
FCLK
2 MHz
1 MHz
Clock high time
TCKH
250
ns
Clock low time
TCKL
250
ns
Chip select setup time
TCSS
50
ns
Chip select hold time
TCSH
0
ns
Chip select low time
TCSL
250
ns
PRE setup time
TPRES
100
ns
PE setup time
TPES
100
ns
PRE hold time
TPREH
0
ns
PE hold time
TPEH
500
ns
Data input setup time
TDIS
100
ns
Data input hold time
TDIH
100
ns
Data output delay time
TPD
400
ns
Data output disable time TCZ
100
ns
Note 1: This parameter is tested at Tamb = 25˚C and FCLK = 1 MHz.
2: This parameter is periodically sampled and not 100% tested.
Conditions
VCC 2.5V
VCC 2.5V
IOL = 2.1 mA; VCC = 4.5V
IOL = 100 µA; VCC = 2.5V
IOH = -400µA; VCC = 4.5V
IOH = -100µA; VCC = 2.5V
VIN = 0.1V to VCC
VOUT = 0.1V to Vcc
VIN/VOUT = 0V (Note 1 & 2)
Tamb = +25˚C; FCLK = 1 MHz
FCLK = 2 MHz; VCC = 3.0V (Note 2)
FCLK = 2 MHz; VCC = 6.0V
FCLK = 1 MHz; VCC = 3.0V
CLK = CS = 0V; VCC = 6.0V
CLK = CS = 0V; VCC = 3.0V
VCC 4.5V
VCC < 4.5V
Relative to CLK
Relative to CLK
Relative to CLK
Relative to CLK
Relative to CLK
Relative to CLK
Relative to CLK
Relative to CLK
CL=100 pF
CL=100 pF (Note 2)
DS11181D-page 2
Preliminary
© 1996 Microchip Technology Inc.
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95SQ015 Даташит, Описание, Даташиты
93LCS56/66
TABLE 1-2: DC AND AC ELECTRICAL CHARACTERISTICS (Continued)
VCC = +2.5V to +6.0V
Commercial(C): Tamb = 0˚C to +70˚C
Industrial (I): Tamb = -40˚C to +85˚C
Parameter
Symbol
Min
Max Units
Conditions
Status valid time
TSV
500 ns CL=100 pF
Program cycle time
TWC
10 ms ERASE/WRITE mode (Note 3)
TEC 15 ms ERAL mode
TWL 30 ms WRAL mode
Endurance
— 1M
— cycles 25°C, Vcc = 5.0V, Block Mode
(Note 4)
3: Typical program cycle time is 4 ms per word.
4: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific appli-
cation, please consult the Total Endurance Model which can be obtained on our BBS or website.
TABLE 1-3: INSTRUCTION SET FOR 93LCS56*/66
93LCS56/66 (x 16 organization)
Instruction SB Opcode Address Data In Data Out PRE PE
Comments
READ
1 10
A7 - A0
— D15-D0 0 X Reads data stored in memory, start-
ing at specified address (.Note).
EWEN
1 00 11XXXXXX
High-Z
0 1 Erase/Write Enable must precede all
programming modes.
ERASE
1 11
A7 - A0
— (RDY/
BSY)
1 Erase data at specified address
location if address is unprotected
(Note).
ERAL
1 00 10XXXXXX —
(RDY/
BSY)
0 1 Erase all registers to “FF”. Valid only
when Protect Register is cleared.
WRITE
1 01
A7 - A0*
D15 - D0 (RDY/
BSY)
0 1 Writes register if address is unpro-
tected.
WRAL
1 00 01XXXXXX D15 - D0 (RDY/ 0 1 Writes all registers. Valid only when
BSY)
Protect Register is cleared.
EWDS
1 00 00XXXXXX —
High-Z
0 X Erase/Write Disable deactivates all
programming instructions.
PRREAD 1
10 XXXXXXXX
A7-A0
1 X Reads address stored in Protect
Register.
PREN
1 00 11XXXXXX
High-Z
1 1 Must immediately precede
PRCLEAR, PRWRITE and PRDS
instructions.
PRCLEAR 1
11
11111111
(RDY/ 1 1 Clears the Protect Register such that
BSY)
all data are NOT write-protected.
PRWRITE 1
01
A7 - A0*
— (RDY/ 1 1 Programs address into Protect Reg-
BSY)
ister. Thereafter, memory addresses
greater than or equal to the address
in Protect Register are write-pro-
tected.
PRDS
1 00
00000000
(RDY/ 1 1 ONE TIME ONLY instruction after
BSY)
which the address in the Protect
Register cannot be altered.
Note: Address A7 bit is a “don’t care” on 93LCS56.
© 1996 Microchip Technology Inc.
Preliminary
DS11181D-page 3










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95SQ015SCHOTTKY RECTIFIER 9 AmpInternational Rectifier
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