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AB125-C1000G PDF даташит

Спецификация AB125-C1000G изготовлена ​​​​«EIC discrete Semiconductors» и имеет функцию, называемую «AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS».

Детали детали

Номер произв AB125-C1000G
Описание AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS
Производители EIC discrete Semiconductors
логотип EIC discrete Semiconductors логотип 

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AB125-C1000G Даташит, Описание, Даташиты
AB40 - AB380/C 1000G
AVALANCHE GLASS
PASSIVATED BRIDGE RECTIFIERS
PRV : 100 - 900 Volts
Io : 1.0 Amperes
WOB
FEATURES :
* Glass passivated chip
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
0.22 (5.59)
0.18 (4.57)
0.39 (10.0)
0.31 (7.87)
+ AC -
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
AC -
+ AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Input Voltage R+C -Load
Maximum DC Blocking Voltage
Minimum Avalanche Breakdown Voltage at 100 µA
Maximum Avalanche Breakdown Voltage at 100 µA
Maximum Average Forward Current For
Free Air Operation at Tc = 45°C R+L -Load
C -Load
Peak Forward Surge Current Single half sine wave
on rated load (JEDEC Method) at TJ = 125 °C
Rating for fusing at TJ = 125°C ( t < 100 ms.)
Maximum Series Resistor C-Load VRMS = ± 10%
Maximum load Capacitance + 50%
-10%
Maximum Forward Voltage per Diode at IF = 1.0 Amp.
Maximum Reverse Current at Rated Repetitive
Peak Voltage per Diode
Ta = 25 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
V BO(min.)
VBO(max.)
AB40-
C1000G
100
40
100
150
600
AB80-
C1000G
200
80
200
250
700
AB125-
C1000G
300
125
300
350
800
AB250-
C1000G
600
250
600
700
1150
AB380-
C1000G
900
380
900
1000
1450
UNIT
Volts
Volts
Volts
Volts
Volts
IF(AV)
1.2 Amps.
1.0
IFSM 40 Amps.
I2t 10 A2S
Rt 1.0 2.0 4.0 8.0 12.0
CL
5000
2500
1000
500
200 µF
VF 1.0 Volts
IR
RθJA
TJ
TSTG
10
36
- 50 to + 125
- 50 to + 125
µA
°C/W
°C
°C
Notes :
1 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm)
copper Pads.
UPDATE : JUNE 19,1998









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AB125-C1000G Даташит, Описание, Даташиты
RATING AND CHARACTERISTIC CURVES ( AB40 - AB380/C1000G )
FIG.1 - DERATING CURVE
FOR OUTPUT RECTIFIED CURRENT
AB40 C1000G - AB125 C1000G
1.2
Resistive or
1.0 Inductive load.
Capacitive Load
0.8 0-10µF
10-100µF
0.6 =100µF
0.4
PC Board
0.375(9.5mm)
0.2
0
0
Copper Pads
0.22" x 0.22" (5.5mm x 5.5mm)
20 40 60 80 100 120
CASE TEMPERATURE, ( °C)
140
FIG.2 - DERATING CURVE
FOR OUTPUT RECTIFIED CURRENT
AB250 C1000G - AB380 C1000G
1.2
Resistive or
1.0 Inductive load.
Capacitive Load
0.8
0-10µF
10-100µF
0.6 =100µF
0.4
PC Board
0.375(9.5mm)
0.2
0
20
Copper Pads
0.22" x 0.22" (5.5mm x 5.5mm)
40 60
80 100
120
CASE TEMPERATURE, ( °C)
140
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
20
10
1
TJ = 25 °C
0.1
Pulse Width = 300 s
1 % Duty Cycle
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
0.1 TJ = 25 °C
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.5 - MAXIMUM NON-REPETITIVE
PEAK FORWARD CURRENT
40
30
20
10
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
100
60
40
20
10
6 TJ = 25 °C
4 f = 1MHz
Vsig = 50mVp-p
2
1
0.1 0.2 0.6 1 2 4 6
10 20 40
100
REVERSE VOLTAGE, VOLTS










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