AA022P2-00 PDF даташит
Спецификация AA022P2-00 изготовлена «Alpha Industries» и имеет функцию, называемую «21-23 GHz GaAs MMIC Medium Power Amplifier». |
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Детали детали
Номер произв | AA022P2-00 |
Описание | 21-23 GHz GaAs MMIC Medium Power Amplifier |
Производители | Alpha Industries |
логотип |
2 Pages
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21–23 GHz GaAs MMIC
Medium Power Amplifier
Features
I Single Bias Supply Operation (6 V)
I 22 dBm Typical P1 dB Output Power
at 23 GHz
I 14 dB Typical Small Signal Gain
I 0.25 µm Ti/Pd/Au Gates
I 100% On-Wafer RF and DC Testing
I 100% Visual Inspection to MIL-STD-883
MT 2010
Description
Alpha’s two-stage balanced K band GaAs MMIC power
amplifier has a typical P1 dB of 22 dBm with 13 dB
associated gain guaranteed across frequency range
21–23 GHz. The chip uses Alpha’s proven 0.25 µm
MESFET technology, and is based upon MBE layers and
electron beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for small signal S-parameters and power
characteristics prior to shipment for guaranteed
performance.
Chip Outline
AA022P2-00
1.700
1.572
RF IN
0.850
0.000
1.576
RF OUT
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature (TC)
Storage Temperature (TST)
Bias Voltage (VD)
Power In (PIN)
Junction Temperature (TJ)
Value
-55°C to +90°C
-65°C to +150°C
7 VDC
19 dBm
175°C
Electrical Specifications at 25°C (VDS = 6 V)
Parameter
Drain Current (at Saturation)
Condition
Small Signal Gain
Input Return Loss
F = 21–23 GHz
F = 21–23 GHz
Output Return Loss
F = 21–23 GHz
Output Power at 1 dB Gain Compression
Saturated Output Power
F = 23 GHz
F = 23 GHz
Gain at Saturation
F = 23 GHz
Thermal Resistance1
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
Symbol
IDS
G
RLI
RLO
P1 dB
PSAT
GSAT
ΘJC
Min.
12
19
21
Typ.2
280
14
-8
-9
22
23.5
11
69
Max.
300
-6
-7
Unit
mA
dB
dB
dB
dBm
dBm
dB
°C/W
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 12/99A
1
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21–23 GHz GaAs MMIC Medium Power Amplifier
Typical Performance Data
20
15 S21
10
5
0 S11
-5 S22
-10
-15
-20
18 19 20 21 22 23 24 25 26
Frequency (GHz)
Typical Small Signal Performance
S-Parameters (VDS = 6 V IDS = 240 mA,
TA = 25˚C)
Bias Arrangement
50 pF
6V
.01 µF
Circuit Schematic
AA022P2-00
Detail A
VDS
VDS
RF IN
See
Detail A
RF OUT
RF IN
RF OUT
For biasing on, adjust VDS from zero to the desired value
(6 V recommended). For biasing off, reverse the biasing on procedure.
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 12/99A
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Номер в каталоге | Описание | Производители |
AA022P2-00 | 21-23 GHz GaAs MMIC Medium Power Amplifier | Alpha Industries |
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