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AA022P1-00 PDF даташит

Спецификация AA022P1-00 изготовлена ​​​​«Alpha Industries» и имеет функцию, называемую «18-23 GHz GaAs MMIC Power Amplifier».

Детали детали

Номер произв AA022P1-00
Описание 18-23 GHz GaAs MMIC Power Amplifier
Производители Alpha Industries
логотип Alpha Industries логотип 

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AA022P1-00 Даташит, Описание, Даташиты
18–23 GHz GaAs MMIC
Power Amplifier
Features
I Single Bias Supply Operation (6 V)
I 14 dB Typical Small Signal Gain
I 24.5 dBm Typical P1 dB Output Power
at 23 GHz
I 0.25 µm Ti/Pd/Au Gates
I 100% On-Wafer RF and DC Testing
I 100% Visual Inspection to MIL-STD-883
MT 2010
Description
Alpha’s two-stage balanced K band GaAs MMIC power
amplifier has a typical P1 dB of 24.5 dBm with 13 dB
associated gain and 11% power added efficiency at
23 GHz. The chip uses Alpha’s proven 0.25 µm MESFET
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for small signal S-parameters and power
characteristics prior to shipment for guaranteed
performance. A broad range of applications exist in both
the high reliability and commercial areas where high power
and gain are required.
Chip Outline
1.700
1.613
1.371
0.086
0.000
AA022P1-00
0.329
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature (TC)
Storage Temperature (TST)
Bias Voltage (VD)
Power In (PIN)
Junction Temperature (TJ)
Value
-55°C to +90°C
-65°C to +150°C
7 VDC
22 dBm
175°C
Electrical Specifications at 25°C (VDS = 6 V)
Parameter
Condition
Drain Current (at Saturation)
Small Signal Gain
F = 18–23 GHz
Input Return Loss
F = 18–23 GHz
Output Return Loss
F = 18–23 GHz
Output Power at 1 dB Gain Compression
F = 23 GHz
Saturated Output Power
F = 23 GHz
Gain at Saturation
Thermal Resistance1
F = 23 GHz
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
Symbol
IDS
G
RLI
RLO
P1 dB
PSAT
GSAT
ΘJC
Min.
12
22
24
Typ.2
300
14
-15
-17
24.5
25.5
13
39
Max.
390
-10
-10
Unit
mA
dB
dB
dB
dBm
dBm
dB
°C/W
Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email [email protected] www.alphaind.com
Specifications subject to change without notice. 12/99A
1









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AA022P1-00 Даташит, Описание, Даташиты
18–23 GHz GaAs MMIC Power Amplifier
Typical Performance Data
20
10
S21
0
-10 S11
-20
S22
-30
S12
-40
18 20 22 24 26
Frequency (GHz)
Typical Small Signal Performance
S-Parameters (VDS = 6 V)
Bias Arrangement
RF IN
50 pF
50 pF
6V
.01 µF
AA022P1-00
26
25
14
24
23 12
PIN
16
22
10
21
20
8
19
18
17
16
18 21 22 23 24 25
Frequency (GHz)
Output Characteristics as a Function of
Frequency and Input Drive Level
(VDS = 6 V)
Circuit Schematic
RF OUT
50 pF
50 pF
6V
.01 µF
For biasing on, adjust VDS from zero to the desired value
(6 V recommended). For biasing off, reverse the biasing on procedure.
RF IN
Detail A
VDS
VDS
SEE
DETAIL A
VDS
VDS
RF OUT
2 Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email [email protected] www.alphaind.com
Specifications subject to change without notice. 12/99A










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Номер в каталогеОписаниеПроизводители
AA022P1-0018-23 GHz GaAs MMIC Power AmplifierAlpha Industries
Alpha Industries

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