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1MBI150NK-060 PDF даташит

Спецификация 1MBI150NK-060 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «IGBT MODULE ( N series )».

Детали детали

Номер произв 1MBI150NK-060
Описание IGBT MODULE ( N series )
Производители Fuji Electric
логотип Fuji Electric логотип 

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1MBI150NK-060 Даташит, Описание, Даташиты
IGBT MODULE ( N series )
n Outline Drawing
n Features
Square RBSOA
Low Saturation Voltage
Overcurrent Limiting Function (~3 Times Rated Current)
n Maximum Ratings and Characteristics
n Equivalent Circuit
Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
VCES
600 V
Gate -Emitter Voltage
VGES
± 20 V
Collector
Current
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
150
300
150
A
300
Max. Power Dissipation
Operating Temperature
PC 600 W
Tj
+150
°C
Storage Temperature
Tstg -40 +125 °C
Isolation Voltage
Screw Torque
A.C. 1min.
Vis
Mounting *1
Terminals *1
2500
3.5
3.5
V
Nm
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5)
Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
ICES
IGES
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Currrent
VF
trr
IRRM
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=150mA
VGE=15V IC=150A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=150A
VGE=± 15V
RG=16
IF=150A VGE=0V
IF=150A
VR=600V
Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
4.5
Typ.
9900
2200
1000
0.6
0.2
0.6
0.2
Max.
1.0
15
7.5
2.8
1.2
0.6
1.0
0.35
3.0
300
1.0
Units
mA
µA
V
V
pF
µs
V
ns
mA
Min.
Typ.
0.05
Max.
0.21
0.47
Units
°C/W









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1MBI150NK-060 Даташит, Описание, Даташиты
Collector current vs. Collector-Emitter voltage
Tj=25°C
350
VGE=20V,15V,12V
300
250
10V
200
150
100
50
8V
0
0123456
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
8
6
4 IC=
300A
2 150A
75A
0
0 5 10 15 20 25
Gate-Emitter voltage : VGE [V]
1000
100
Switching time vs. Collector current
VCC=300V, RG=16, VGE=±15V, Tj=25°C
ttoofnf
tr
tf
Collector current vs. Collector-Emitter voltage
Tj=125°C
350
VGE=20V,15V, 12V
300
250
10V
200
150
100
50 8V
0
0123456
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
8
6
4 IC=
300A
150A
2
75A
0
0 5 10 15 20 25
Gate-Emitter voltage : VGE [V]
1000
Switching time vs. Collector current
VCC=300V, RG=16, VGE=±15V, Tj=125°C
ttoofnf
tr
tf
100
10
0
50 100 150 200 250
Collector current : IC [A]
10
0
50 100 150 200
Collector current : IC [A]
250









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1MBI150NK-060 Даташит, Описание, Даташиты
1000
100
Switching time vs. RG
VCC=300V, IC=150A, VGE=±15V, Tj=25°C
ton
toff
tr
tf
10
10
50
Gate resistance : RG []
350
300
250
200
150
100
50
0
0
Forward current vs. Forward voltage
VGE=OV
Tj=125°C 25°C
123
Forward voltage : VF [V]
4
Transient thermal resistance
1
Diode
IGBT
0,1
0,01
0,001
0,01
0,1
Pulse width : PW [sec]
1
Dynamic input characteristics
Tj=25°C
500 25
VCC=200V
400 300V 20
400V
300 15
200 10
100 5
00
0 100 200 300 400 500 600 700 800 900
Gate charge : QG [nC]
Reverse recovery characteristics
trr , Irr vs. IF
trr 125°C
100 Irr 125°C
trr 25°C
Irr 25°C
10
0
50 100 150 200
Forward current : IF [A]
250
1400
Reversed biased safe operating area
+VGE=15V, -VGE<15V, Tj<125°C, RG>16
1200
1000
800
SCSOA
(non-repetitive pulse)
600
400
200
0
0
RBSOA (Repetitive pulse)
100 200 300 400 500 600
Collector-Emitter voltage : VCE [V]










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Номер в каталогеОписаниеПроизводители
1MBI150NK-060IGBT MODULE ( N series )Fuji Electric
Fuji Electric

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