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даташит 1MBH25-120 PDF ( Datasheet )

1MBH25-120 Datasheet Download - Fuji Electric

Номер произв 1MBH25-120
Описание Molded IGBT
Производители Fuji Electric
логотип Fuji Electric логотип 



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1MBH25-120 Даташит, Описание, Даташиты
1MBH25-120,1MBH25D-120,
1200V / 25A
Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Molded IGBT
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
1MBH25-120 / IGBT
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector DC
Tc=25°C
current
Tc=100°C
1ms Tc=25°C
Max. power dissipation(IGBT)
Operating temperature
Storage temperature
Screw torque
Symbol
VCES
VGES
IC25
IC100
Icp
PC
Tj
Tstg
-
Rating
1200
±20
38
25
114
310
+150
-40 to +150
70
Unit
V
V
A
A
A
W
°C
°C
N·m
Equivalent Circuit Schematic
IGBT
C:Collector
G:Gate
E:Emitter
1MBH25D-120 / IGBT+FWD
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector DC
Tc=25°C
current
Tc=100°C
1ms Tc=25°C
Max. power dissipation (IGBT)
Max. power dissipation (FWD)
Operating temperature
Storage temperature
Screw torque
Symbol
VCES
VGES
IC25
IC100
Icp
PC
PC
Tj
Tstg
-
Rating
1200
±20
38
25
114
310
145
+150
-40 to +150
70
Unit
V
V
A
A
A
W
W
°C
°C
N·m
IGBT + FWD
C:Collector
G:Gate
E:Emitter







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1MBH25-120 Даташит, Описание, Даташиты
1MBH25-120, 1MBH25D-120
Molded IGBT
Electrical characteristics (at Tj=25°C unless otherwise specified)
1MBH25-120 / IGBT
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
Characteristics
Min.
Typ.
––
––
5.5 –
––
– 2500
– 500
– 200
––
––
––
––
Max.
1.0
20
8.5
3.5
1.2
0.6
1.5
0.5
1MBH25D-120 / IGBT+FWD
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
FWD forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
Characteristics
Min.
Typ.
––
––
5.5 –
––
– 2500
– 500
– 200
––
––
––
––
––
––
Max.
1.0
20
8.5
3.5
1.2
0.6
1.5
0.5
3.0
0.35
Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=25mA
VGE=15V, IC=25A
VGE=0V
VCE=10V
f=1MHz
VCC=600V IC=25A
VGE=±15V
RG=82 ohm
(Half Bridge)
Unit
mA
µA
V
V
pF
µs
Conditions
Unit
VGE=0V, VCE=1200V
mA
VCE=0V, VGE=±20V
µA
VCE=20V, IC=25mA
V
VGE=15V, IC=25A
V
VGE=0V
pF
VCE=10V
f=1MHz
VCC=600V, IC=25A
µs
VGE=±15V
RG=82 ohm
(Half Bridge)
IF=25A, VGE=0V
V
IF=25A, VGE=-10V, di/dt=100A/µs µs
Thermal resistance characteristics
1MBH25-120 / IGBT
Item
Symbol
Thermal resistance
Rth(j-c)
1MBH25D-120 / IGBT+FWD
Item
Symbol
Thermal resistance
Rth(j-c)
Rth(j-c)
Characteristics
Min.
Typ.
––
Max.
0.40
Conditions
IGBT
Characteristics
Min.
Typ.
––
––
Max.
0.40
0.86
Conditions
IGBT
FWD
Unit
°C/W
Unit
°C/W
°C/W
Outline drawings, mm
1MBH25-120, 1MBH25D-120
TO-3PL










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