DataSheet.es    


PDF 1MBH08D-120 Data sheet ( Hoja de datos )

Número de pieza 1MBH08D-120
Descripción Molded IGBT
Fabricantes Fuji Electric 
Logotipo Fuji Electric Logotipo



Hay una vista previa y un enlace de descarga de 1MBH08D-120 (archivo pdf) en la parte inferior de esta página.


Total 4 Páginas

No Preview Available ! 1MBH08D-120 Hoja de datos, Descripción, Manual

1MBH08D-120
1200V / 8A Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Molded IGBT
Outline drawings, mm TO-3PL
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector DC
Tc=25°C
current
Tc=105°C
1ms Tc=25°C
Max. power dissipation (IGBT)
Max. power dissipation (FWD)
Operating temperature
Storage temperature
Screw torque
Symbol
VCES
VGES
IC25
IC105
Icp
PC
PC
Tj
Tstg
-
Rating
1200
±20
15
8
39
135
85
+150
-40 to +150
70
Unit
V
V
A
A
A
W
W
°C
°C
N·m
Electrical characteristics (at Tc=25°C unless otherwise specified)
Item
Symbol
Characteristics
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
Min.
5.5
Typ.
1000
160
60
Max.
1.0
20
8.5
3.5
1.2
Switching
Time
Turn-off time
Turn-on time
tr
toff
tf
ton
– – 0.6
– – 1.5
– – 0.5
– 0.16 –
Turn-off time
tr
toff
– 0.11 –
– 0.30 –
tf – – 0.50
FWD forward on voltage VF – – 3.0
Reverse recovery time
trr – – 0.35
Equivalent Circuit Schematic
IGBT +
C:Collector
G:Gate
E:Emitter
Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=8mA
VGE=15V, IC=8A
VGE=0V
VCE=10V
f=1MHz
VCC=600V, IC=8A
VGE=±15V
RG=200 ohm
(Half Bridge)
VCC=600V, IC=8A
VGE=+15V
RG=20 ohm
(Half Bridge)
IF=8A
IF=8A, VGE=-10V,
VR=200V, di/dt=100A/μs
FWD
Unit
mA
μA
V
V
pF
μs
μs
V
μs
Thermal resistance characteristics
Item
Symbol
Thermal resistance
Rth(j-c)
Rth(j-c)
Characteristics
Min.
Typ.
––
––
Max.
0.92
1.47
Conditions
IGBT
FWD
Unit
°C/W
°C/W

1 page





PáginasTotal 4 Páginas
PDF Descargar[ Datasheet 1MBH08D-120.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
1MBH08D-120Molded IGBTFuji Electric
Fuji Electric

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar